Light emitting device package

ABSTRACT

A light emitting device package including a package body comprising a first opening; a light emitting device disposed in the first opening and including a first bonding part and a second bonding part; a first conductor disposed below the first bonding part; and a second conductor disposed below the second bonding part. Further, the first conductor is electrically connected to the first bonding part, and the second conductor is electrically connected to the second bonding part.

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

This application is a Divisional application of U.S. application Ser.No. 16/646,623, filed on Mar. 12, 2020 (now U.S. Pat. No. 11,373,973issued on Jun. 28, 2022), which is the U.S. National Stage Applicationunder 35 U.S.C. § 371 of PCT Application No. PCT/KR2018/010827, filed onSep. 14, 2018, which claims priority to Korean Patent Application No.10-2017-0118981, filed on Sep. 15, 2017, whose entire disclosures arehereby incorporated by reference.

TECHNICAL FIELD

Embodiments relate to a semiconductor device package, a method ofmanufacturing a semiconductor device package, and a light source device.

BACKGROUND ART

A semiconductor device comprising compounds such as GaN and AlGaN hasmany merits such as wide and easily adjustable bandgap energy, so thedevice can be used variously as light emitting devices, light receivingdevices and various kinds of diodes.

In particular, light emitting devices such as light emitting diodes andlaser diodes obtained by using a group III-V or a group II-VI compoundsemiconductor substances can implement light having various wavelengthband such as red, green, blue and ultraviolet rays due to thedevelopment of thin film growth technology and device materials. Inaddition, the light emitting devices such as light emitting diodes andlaser diodes obtained by using a group III-V or a group II-VI compoundsemiconductor substances can implement a white light source having highefficiency by using fluorescent substances or combining colors. Such asemiconductor device has advantages such as low power consumption,semi-permanent lifetime, quick response speed, safety, and environmentalfriendliness compared to conventional light sources such as fluorescentlamps and incandescent lamps.

In addition, when a light receiving device such as a photodetector or asolar cell is manufactured using a group III-V or a group II-VI compoundsemiconductor substances, a photoelectric current is generated byabsorbing light having various wavelength domains with the developmentof device materials, so that light having various wavelength domainssuch as from gamma rays to radio waves can be used. In addition, theabove light receiving device has advantages such as quick responsespeed, safety, environmental friendliness and easy control of devicematerials, so that the light receiving device can be easily used for apower control, a super-high frequency circuit or a communication module.

Accordingly, the semiconductor device has been applied and expanded to atransmission module of an optical communication means, a light emittingdiode backlight replacing a cold cathode fluorescence lamp (CCFL)constituting a backlight of a liquid crystal display (LCD), a whitelight emitting diode lighting apparatus replaceable with a fluorescentlamp or an incandescent bulb, a vehicular headlight, a traffic light anda sensor for detecting gas or fire. In addition, the applications of thesemiconductor device can be expanded to a high frequency applicationcircuit, a power control apparatus, or a communication module.

For example, the light emitting device may be provided as a p-n junctiondiode having a characteristic in which electrical energy is convertedinto light energy by using a group III-V element or a group II-VIelement in the periodic table, and various wavelengths can be realizedby adjusting the composition ratio of the compound semiconductorsubstances.

For instance, a nitride semiconductor represents superior thermalstability and wide band gap energy so that the nitride semiconductor hasbeen spotlighted in the field of optical devices and high-powerelectronic devices. In particular, blue, green, and UV light emittingdevices employing the nitride semiconductor have already beencommercialized and extensively used.

For example, an ultraviolet light emitting device may be used as a lightemitting diode that emits light distributed in a wavelength range of 200nm to 400 nm, used for sterilization and purification in the case of ashort wavelength in the wavelength band, and used for an exposuremachine, a curing machine, or the like in the case of a long wavelength.

Ultraviolet rays may be divided into three groups of UV-A (315 nm to 400nm), UV-B (280 nm to 315 nm) and UV-C (200 nm to 280 nm) in the order oflong wavelength. The UV-A (315 nm to 400 nm) has been applied to variousfields such as UV curing for industrial use, curing of printing ink, anexposure machine, discrimination of counterfeit, photocatalyticdisinfection, special illumination (aquarium/agriculture and the like),the UV-B (280 nm to 315 nm) has been used for medical use, and the UV-C(200 nm to 280 nm) has been applied to air purification, waterpurification, sterilization products, and the like.

As the semiconductor devices capable of providing high output arerequested, studies on the semiconductor devices capable of increasing inoutput by applying high power are being conducted.

Also, in the semiconductor device package, studies on methods ofimproving light extraction efficiency of the semiconductor device andimproving the brightness at a stage of the package are being conducted.Also, in the semiconductor device package, studies on methods ofimproving bonding strength between the package electrode and thesemiconductor device are being conducted.

Also, in the semiconductor device package, studies on methods ofreducing the manufacturing costs and improving the manufacturing yieldthrough the improvement of process efficiency and the structural changeare being conducted.

SUMMARY

Embodiments provide a semiconductor device package that is capable ofimproving light extraction efficiency and electrical characteristics, amethod of manufacturing the semiconductor device package, and a lightsource device.

Embodiments provide a semiconductor device package that is capable ofimproving process efficiency and proposing a new package structure toreduce manufacturing costs and improve manufacturing yield, a method ofmanufacturing the semiconductor device package, and a light sourcedevice.

Embodiments provide a semiconductor device package that is capable ofpreventing re-melting from occurring in a bonding area of thesemiconductor device package while the semiconductor device package isre-bonded to a substrate or the like, and a method of manufacturing thesemiconductor device package.

A light emitting device package according to an embodiment maycomprises: a first package body comprising first and second openings; asecond package body disposed on the first package body and comprising athird opening; a light emitting device disposed in the third opening; afirst resin disposed between an upper surface of the first package bodyand the light emitting device; and a second resin disposed in the thirdopening, wherein the upper surface of the first package body may bebonded to a lower surface of the second package body, wherein the firstpackage body may comprise a recess that is recessed from the uppersurface to a lower surface of the first package body, wherein the firstresin may be disposed in the recess, wherein the first resin and thesecond resin may comprise materials different from each other, andwherein the first resin may contact the light emitting device and thesecond resin.

According to an embodiment, at least one of the first package body andthe second package body may comprise a wavelength conversion material.

According to an embodiment, at least one of the first package body andthe second package may be formed of a transparent resin.

According to an embodiment, at least one of the first package body andthe second package may be formed of a reflective resin.

According to an embodiment, the first package body and the secondpackage body may comprise materials different from each other.

According to an embodiment, the first package body and the secondpackage body may comprise different materials selected from PPA, PCT,EMC, SMC, and PI, and the first package body may comprise a reflectivematerial, and the second package body may comprise a wavelengthconversion material.

According to an embodiment, the first package body and the secondpackage body may comprise different materials selected from PPA, PCT,EMC, SMC, and PI, and the first package body may comprise a wavelengthconversion material, and the second package body may comprise areflective material.

According to an embodiment, the first package body and the secondpackage body may comprise different materials selected from PPA, PCT,EMC, SMC, and PI, and the first package body may be formed of atransparent resin, and the second package body may comprise at least oneof a wavelength conversion material and a reflective material.

According to an embodiment, the light emitting device may furthercomprise an adhesion layer disposed between the first package body andthe second package body.

According to an embodiment, the light emitting device may comprise afirst bonding part disposed on the first opening and a second bondingpart disposed on the second opening, the recess may be provided in aclosed loop shape around the first and second openings, and when viewedfrom an upper side of the light emitting device, the light emittingdevice may have a size greater than a closed loop area provided by therecess.

Advantageous Effects

According to the semiconductor device package and the method ofmanufacturing the semiconductor device package according to theembodiment, there is the advantage in improving the light extractionefficiency, the electrical characteristics, and the reliability.

According to the semiconductor device package and the method ofmanufacturing the semiconductor device package according to theembodiment, there is the advantage in improving the process efficiencyand proposing the new package structure to reduce the manufacturingcosts and improve the manufacturing yield.

The semiconductor device package according to the embodiment may beprovided with the body having the high reflectance to prevent thereflector from being discolored, thereby improving the reliability ofthe semiconductor device package.

According to the semiconductor device package and the method ofmanufacturing the semiconductor device according to the embodiment,there is the advantage in preventing the re-melting phenomenon fromoccurring in the bonding area of the semiconductor device package whilethe semiconductor device package is re-bonded on the substrate and thelike, or thermally treated.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view of a light emitting device package according to anembodiment of the present invention.

FIG. 2 is an exploded perspective view explaining the light emittingdevice package according to an embodiment of the present invention.

FIG. 3 is a view explaining an arrangement relationship between apackage body, a recess, and an opening of the light emitting devicepackage according to an embodiment of the present invention.

FIGS. 4 to 8 are views explaining a method of manufacturing a lightemitting device package according to an embodiment of the presentinvention.

FIG. 9 is a view illustrating another example of the light emittingdevice package according to an embodiment of the present invention.

FIG. 10 is a view illustrating further another example of the lightemitting device package according to an embodiment of the presentinvention.

FIG. 11 is a plan view explaining an example of a light emitting devicethat is applied to the light emitting device package according to anembodiment of the present invention.

FIG. 12 is a cross-sectional view taken along line G-G of a lightemitting device shown in FIG. 11 .

FIGS. 13 a and 13 b are views explaining a process of forming asemiconductor layer by a method of manufacturing a light emitting deviceaccording to an embodiment of the present invention.

FIGS. 14 a and 14 b are views explaining a process of forming a lighttransmissive electrode layer by the method of manufacturing the lightemitting device according to an embodiment of the present invention.

FIGS. 15 a and 15 b are views explaining a process of performing anisolation process by the method of manufacturing the light emittingdevice according to an embodiment of the present invention.

FIGS. 16 a and 16 b are views explaining a process of forming areflective layer by the method of manufacturing the light emittingdevice according to an embodiment of the present invention.

FIGS. 17 a and 17 b are views explaining a process of forming a firstelectrode, a second electrode, and a connection electrode by the methodof manufacturing the light emitting device according to an embodiment ofthe present invention.

FIGS. 18 a and 18 b are views explaining a process of forming aprotective layer by the method of manufacturing the light emittingdevice according to an embodiment of the present invention.

FIGS. 19 a and 19 b are views explaining a process of forming a firstbonding pad and a second bonding pad by the method of manufacturing thelight emitting device according to an embodiment of the presentinvention.

FIG. 20 is a view illustrating further another example of a lightemitting device that is applied to the light emitting device packageaccording to an embodiment of the present invention.

DETAILED DESCRIPTION

Hereinafter, embodiments will be described with reference to theaccompanying drawings. In the description of embodiments, it will beunderstood that when a layer (or film), region, pattern or structure isreferred to as being ‘on/over’ or ‘under’ another layer (or film),region, pattern or structure, the terminology of ‘on/over’ and ‘under’includes both the meanings of ‘directly’ and ‘indirectly’. In addition,the criteria for the on/over or under each layer will be described basedon the drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package and a method ofmanufacturing the semiconductor device package according to embodimentswill be described with reference to the accompanying drawings.Hereinafter, a description will be given based on a case in which alight emitting device is applied as an example of a semiconductordevice.

First, a light emitting device package according to an embodiment of thepresent invention will be described with reference to FIGS. 1 to 3 .FIG. 1 is a view of a light emitting device package according to anembodiment of the present invention, FIG. 2 is an exploded perspectiveview explaining the light emitting device package according to anembodiment of the present invention, and FIG. 3 is a view explaining anarrangement relationship between a package body, a recess, and anopening of the light emitting device package according to an embodimentof the present invention.

As illustrated in FIGS. 1 to 3 , a light emitting device package 100according to the embodiment may comprise a package body 110 and a lightemitting device 120.

The package body 110 may comprise a first package body 113 and a secondpackage body 117. The second package body 117 may be disposed on thefirst package body 113. The second package body 117 may be disposedaround an upper surface of the first package body 113. The secondpackage body 117 may provide a cavity C in the upper surface of thefirst package body 113. The second package body 117 may comprise anopening passing through the upper and lower surfaces thereof.

In other words, the first package body 113 may be referred to as a lowerbody, and the second package body 117 may be referred to as an upperbody. Also, according to an embodiment, the package body 110 may notcomprise the second package body 117 that provides the cavity but maycomprise only the first package body 113 that provides a flat uppersurface.

The second package body 117 may reflect light emitted from the lightemitting device 120 in an upward direction. The second package body 117may be disposed to be inclined with respect to the upper surface of thefirst package body 113.

The package body 110 may comprise the cavity C. The cavity may comprisea lower surface and a side surface inclined from the lower surface tothe upper surface of the package body 110.

According to an embodiment, the package body 110 may have a structurehaving the cavity C or may have a structure having a flat upper surfacewithout the cavity C.

For example, the package body 110 may be formed of at least one selectedfrom a group including polyphthalamide (PPA), polychloro triphenyl(PCT), a liquid crystal polymer (LCP), polyamide9T (PAST), silicone, anepoxy molding compound (EMC), a silicone molding compound (SMC),ceramic, polyimide (PI), photo sensitive glass (PSG), sapphire (Al₂O₃),and the like. Also, the package body 110 may comprise a reflectivematerial of a high refractive filler, such as TiO₂ and SiO₂. The packagebody 110 may comprise a wavelength conversion material such as a quantumdot and a phosphor.

According to an embodiment, the first package body 113 and the secondpackage body 117 may comprise different materials. For example, thefirst package body 113 and the second package body 117 may be bonded toeach other after being formed of different materials in differentprocesses. For example, the first package body 113 and the secondpackage body 117 may be bonded to each other through an adhesion layer160.

The adhesion layer 160 may be disposed between the first package body113 and the second package body 117. The adhesion layer 160 may bedisposed on the upper surface of the first package body 113. Theadhesion layer 160 may be disposed on the lower surface of the secondpackage body 117. The adhesion layer 160 may be disposed around thelight emitting device 120 to provide the cavity.

The adhesion layer 160 may comprise at least one of an epoxy-basedmaterial, a silicone-based material, or a hybrid material including theepoxy-based material and the silicone-based material. Also, the adhesionlayer 160 may reflect light emitted from the light emitting device 120.When the adhesion layer 160 has a reflective function, the adhesionlayer 160 may comprise white silicone.

Each of the first package body 113 and the second package body 117 maycomprise at least one selected from resin materials includingpolyphthalamide (PPA), polychloro triphenyl (PCT), a liquid crystalpolymer (LCP), polyamide9T (PAST), silicone, an epoxy molding compound(EMC), a silicone molding compound (SMC), polyimide (PI), and the like,as a base material.

Also, each of the first package body 113 and the second package body 117may comprise at least one of the reflective material and the wavelengthconversion material. Also, the first package body 113 and the secondpackage body 117 may not comprise the reflective material and thewavelength conversion material. Each of the first package body 113 andthe second package body 117 may be formed of a transparent resin.

The first package body 113 and the second package body 117 may comprisedifferent base materials. The first package body 113 and the secondpackage body 117 may comprise different resins.

For example, the first package body 113 may comprise a reflectivematerial and the second package body 117 may comprise a wavelengthconversion material. Also, the first package body 113 may comprise thewavelength conversion material, and the second package body 117 maycomprise the reflective material.

According to an embodiment, the first package body 113 may comprise thereflective material, and the second package body 117 may comprise thereflective material and the wavelength conversion material. Also, thefirst package body 113 may comprise the reflective material and thewavelength conversion material, and the second package body 117 maycomprise the wavelength conversion material.

In the light emitting device package 100 according to the embodiment,the first package body 113 and the second package body 117 includingdifferent base materials may be formed separately in different processesand then be manufactured in a modular manner through an optionalcombination that is capable of satisfying characteristics required forthe application product. A method of manufacturing the light emittingdevice package according to an embodiment will be described later.

According to an embodiment, the light emitting device 120 may comprise afirst bonding part 121, a second bonding part 122, a light emittingstructure 123, and a substrate 124.

The light emitting device 120 may comprise the light emitting structure123 disposed under the substrate 124. The light emitting structure 123may comprise a first conductivity type semiconductor layer, a secondconductivity type semiconductor layer, an active layer disposed betweenthe first conductivity type semiconductor layer and the secondconductivity type semiconductor layer. The first bonding part 121 may beelectrically connected to the first conductivity type semiconductorlayer. Also, the second bonding part 122 may be electrically connectedto the second conductivity type semiconductor layer.

The light emitting device 120 may be disposed on the package body 110.The light emitting device 120 may be disposed on the first package body113. The light emitting device 120 may be disposed in the cavity Cprovided by the second package body 117.

The first bonding part 121 may be disposed on the lower surface of thelight emitting device 120. The second bonding part 122 may be disposedon the lower surface of the light emitting device 120. The first bondingpart 121 and the second bonding part 122 may be spaced apart from eachother on the lower surface of the light emitting device 120.

The first bonding part 121 may be disposed between the light emittingstructure 123 and the first package body 113. The second bonding part122 may be disposed between the light emitting structure 123 and thefirst package body 113.

Each of the first bonding part 121 and the second bonding part 122 maybe provided as a single layer or a multilayer by using one or morematerials selected from a group including Ti, Al, Sn, In, Ir, Ta, Pd,Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru, Rh, ZnO,IrO_(x), RuO_(x), NiO, RuO_(x)/ITO, Ni/IrO_(x)/Au, andNi/IrO_(x)/Au/ITO, or an alloy thereof.

As illustrated in FIGS. 1 to 3 , the light emitting device package 100according to the embodiment may comprise a first opening TH1 and asecond opening TH2.

The package body 110 may comprise the first opening TH1 passing throughthe lower surface of the package body 110 from the lower surface of thecavity C. The package body 110 may comprise the second opening TH2passing through the lower surface of the package body 110 from the lowersurface of the cavity C.

For example, the first package body 113 may have a flat lower surfaceand may comprise an upper surface parallel to the lower surface. Thefirst and second openings TH1 and TH2 may pass through the upper andlower surfaces of the first package body 113.

The first opening TH1 may be provided in the first package body 113. Thefirst opening TH1 may be provided to pass through the first package body113. The first opening TH1 may be provided to pass through the upper andlower surfaces of the first package body 113 in a first direction.

The first opening TH1 may be disposed under the first bonding part 121of the light emitting device 120. The first opening TH1 may be providedto overlap the first bonding part 121 of the light emitting device 120.The first opening TH1 may be provided to overlap the first bonding part121 of the light emitting device 120 in the first direction from theupper surface to the lower surface of the first package body 113.

The second opening TH2 may be provided in the first package body 113.The second opening TH2 may be provided to pass through the first packagebody 113. The second opening TH2 may be provided to pass through theupper and lower surfaces of the first package body 113 in the firstdirection.

The second opening TH2 may be disposed under the second bonding part 122of the light emitting device 120. The second opening TH2 may be providedto overlap the second bonding part 122 of the light emitting device 120.The second opening TH2 may be provided to overlap the second bondingpart 122 of the light emitting device 120 in the first direction fromthe upper surface to the lower surface of the first package body 113.

The first opening TH1 and the second opening TH2 may be spaced apartfrom each other. The first opening TH1 and the second opening TH2 may bespaced apart from each other under the lower surface of the lightemitting device 120.

According to an embodiment, a width W1 of an upper region of the firstopening TH1 may be less than or equal to a width of the first bondingpart 121. Also, a width of the upper region of the second opening TH2may be less than or equal to a width of the second bonding part 122.

Also, the width W1 of the upper region of the first opening TH1 may beless than or equal to a width W2 of a lower region of the first openingTH1. Also, the width of the upper region of the second opening TH2 maybe less than or equal to a width of a lower region of the second openingTH2.

The first opening TH1 may be provided in an inclined shape of which awidth gradually decreases from the lower region to the upper region. Thesecond opening TH2 may be provided in an inclined shape of which a widthgradually decreases from the lower region to the upper region.

However, the present invention is not limited thereto, and an inclinedsurfaces between the upper and lower regions of the first and secondopenings TH1 and TH2 may have a plurality of inclined surfaces havingdifferent inclinations, and each of the inclined surfaces may bedisposed at a curvature. A width between the first opening TH1 and thesecond opening TH2 on an area of the lower surface of the first packagebody 113 may be provided to several hundred micrometers. A width betweenthe first opening TH1 and the second opening TH2 on an area of the lowersurface of the first package body 113 may be provided to 100 micrometersto 150 micrometers.

The width between the first opening TH1 and the second opening TH2 onthe area of the lower surface of the first package body 113 may beselected to be provided to a predetermined distance or more so as toprevent electrical short circuit from occurring between the bondingparts when the light emitting device package 100 according to anembodiment is mounted on a circuit board, a submount, and the like.

Referring to FIGS. 1 to 3 , the light emitting device package 100according to an embodiment may comprise a recess R. The recess R may beprovided to be recessed from the lower surface of the cavity C to thelower surface of the package body 110.

The recess R may be provided in the first package body 113. The recess Rmay be provided to be recessed from the upper surface to the lowersurface of the first package body 113. The recess R may be disposedunder the light emitting device 120.

The recess R may be provided between the first opening TH1 and thesecond package body 117. Also, the recess R may be provided between thesecond opening TH2 and the second package body 117. For example, therecess R may be provided in a closed loop shape under the light emittingdevice 120.

When viewed from an upper side of the light emitting device 120, therecess R may be disposed between the first bonding part 121 and thesecond package body 117 disposed adjacent to the first opening TH1.

Also, when viewed from the upper side of the light emitting device 120,the recess R may be disposed between the second bonding part 122 and thesecond package body 117 disposed adjacent to the second opening TH2.

The recess R may be provided in a closed loop shape around the first andsecond openings TH1 and TH2.

When viewed from the upper side of the light emitting device 120, a sizeof the light emitting device 120 may be greater than a closed loop areaprovided by the recess R.

When viewed from the upper side of the light emitting device 120, aclosed loop defined by the recess R may be provided inside an outlineconnecting four side surfaces of the light emitting device 120 to eachother.

As illustrated in FIG. 1 , the light emitting device package 100according to an embodiment may comprise a first resin 130.

The first resin 130 may be disposed in the recess R. The first resin 130may be disposed between the light emitting device 120 and the firstpackage body 113. The first resin 130 may be disposed between the firstbonding part 121 and the second bonding part 122. For example, the firstresin 130 may be disposed to contact a side surface of the first bondingpart 121 and a side surface of the second bonding part 122.

The first resin 130 may be disposed around the first bonding part 121 toseal the upper region of the first opening TH1. The first resin 130 maybe disposed around the second bonding part 122 to seal the upper regionof the second opening TH2.

The first resin 130 may provide stable fixing force between the lightemitting device 120 and the first package body 113. For example, thefirst resin 130 may be disposed to directly contact the upper surface ofthe first package body 113. Also, the first resin 130 may be disposed todirectly contact the lower surface of the light emitting device 120.

For example, the first resin 130 may comprise at least one of anepoxy-based material, a silicone-based material, or a hybrid materialincluding the epoxy-based material and the silicone-based material.Also, the first resin 130 may reflect light emitted from the lightemitting device 120. When the first resin 130 has a reflective function,the first resin 130 may comprise white silicone. When the first resin130 has the reflection function, the first resin 130 may be formed of amaterial including, for example, TiO₂, SiO₂, and the like. The firstresin 130 may be referred to as an adhesive.

According to an embodiment, a depth of the recess R may be less than adepth of the first opening TH1 or a depth of the second opening TH2.

The depth of the recess R may be determined in consideration of adhesionforce of the first resin 130. Also, the recess R may have a depth T1 inconsideration of the stable strength of the first package body 113and/or have a depth T1 determined to prevent the light emitting devicepackage 100 from being cracked by heat emitted from the light emittingdevice 120.

The recess R may provide an appropriate space, in which an underfillprocess is performed, under the light emitting device 120. The recess Rmay be provided to be greater than or equal to a first depth so that thefirst resin 130 can be sufficiently provided between the lower surfaceof the light emitting device 120 and the upper surface of the firstpackage body 113. Also, the recess R may be provided to be less than orequal to a second depth so as to provide stable strength of the firstpackage body 113.

The depth and width W3 of the recess R may affect a formation positionand fixing force of the first resin 130. The depth and width W3 of therecess R may be determined so that sufficient fixing force is providedby the first resin 130 disposed between the first package body 113 andthe light emitting device 120.

For example, the depth of the recess R may be provided to several tensof micrometers. The depth of the recess R may be provided in a rangefrom 40 micrometers to 60 micrometers.

Also, the width W3 of the recess R may be provided to hundreds ofmicrometers. The width W3 of the recess R may be provided in a rangefrom 140 micrometers to 160 micrometers. For example, the width W3 ofthe recess may be provided to 150 micrometers.

The first and second bonding parts 121 and 122 of the light emittingdevice 120 may be sealed from the outside by the first resin 130provided in the recess R. The first resin 130 may be provided in aclosed loop shape under the light emitting device 120. As illustrated inFIGS. 2 and 3 , the first resin 130 may be provided in a closed loopshape along a shape of the recess R. The recess R may be provided as aclosed loop having a rectangular shape or may be provided as a closedloop having a circular or elliptic shape.

The depth of the first opening TH1 may be provided corresponding to athickness of the first package body 113. The depth of the first openingTH1 may be provided to a thickness that is enough to maintain the stablestrength of the first package body 113.

For example, the depth of the first opening TH1 may be provided toseveral hundred micrometers. The depth of the first opening TH1 may beprovided in a range from 180 micrometers to 220 micrometers. Forexample, the depth of the first opening TH1 may be provided to 200micrometers.

For example, a thickness obtained by subtracting the depth of the recessR from the depth of the first opening TH1 may be selected to be at least100 micrometers or more. This is in consideration of a thickness of thefirst package body 113, which is capable of providing crack free, in aninjection process.

According to an embodiment, the depth of the first opening TH1 may beprovided 2 times to 10 times the depth of the recess R. For example,when the depth of the first opening TH1 is provided to 200 micrometers,the depth of the recess R may be provided in a range from 20 micrometersto 100 micrometers.

Also, as illustrated in FIG. 1 , the light emitting device package 100according to an embodiment may comprise a second resin 140.

The second resin 140 may be provided on the light emitting device 120.The second resin 140 may be disposed on the first package body 113. Thesecond resin 140 may be disposed in the cavity C provided by the secondpackage body 117.

The second resin 140 may comprise an insulation material. Also, thesecond resin 140 may comprise a wavelength conversion material thatreceives light emitted from the light emitting device 120 to providelight of which a wavelength is converted. For example, the second resin140 may comprise a phosphor, a quantum dot, and the like.

Also, according to an embodiment, the light emitting structure 123 maybe provided as a compound semiconductor. The light emitting structure123 may be provided as, for example, Group II-VI or Group III-V compoundsemiconductors. For example, the light emitting structure 123 maycomprise at least two elements selected from aluminum (Al), gallium(Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N).

The light emitting structure 123 may comprise a first conductivity typesemiconductor layer 110, an active layer 120, and a second conductivitytype semiconductor layer 130.

The first and second conductivity type semiconductor layers may beimplemented as at least one of Group III-V or Group II-VI compoundsemiconductors. For example, each of the first and second conductivitytype semiconductor layers may comprise a semiconductor material having acompositional formula of In_(x)Al_(y)Ga_(1-x-y)N (0≤x≤1, 0≤y≤1,0≤x+y≤1). For example, each of the first and second conductivity typesemiconductor layers may comprise at least one selected from a groupincluding GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP,GaAs, GaAsP, AlGaInP, and the like. The first conductivity typesemiconductor layer may be an n-type semiconductor layer that is dopedwith an N-type dopant such as Si, Ge, Sn, Se, Te, and the like. Thesecond conductivity type semiconductor layer may be a p-typesemiconductor layer that is doped with a p-type dopant such as Mg, Zn,Ca, Sr, Ba, and the like.

The active layer may be formed of a compound semiconductor. For example,the active layer may be formed of at least one of Group III-V or GroupsII-VI compound semiconductors. When the active layer has a multi-wellstructure, the active layer may comprise a plurality of well layers anda plurality of barrier layers, which are alternately arranged and may beformed of a material having a compositional formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0≤x≤1, 0≤y≤1). For example, the active layermay comprise at least one selected from a group including InGaN/GaN,GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs,InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs, and the like.

Also, as illustrated in FIG. 1 , the light emitting device package 100according to an embodiment may comprise a first conductive layer 321 anda second conductive layer 322. The first conductive layer 321 may bespaced apart from the second conductive layer 322.

The first conductive layer 321 may be provided in the first opening TH1.The first conductive layer 321 may be disposed under the first bondingpart 121. A width of the first conductive layer 321 may be less than thewidth of the first bonding part 121.

The first bonding part 121 may have a width in a second directionperpendicular to the first direction in which the first opening TH1 isformed. The width of the first bonding part 121 may be provided to begreater than a width of the first opening TH1 in the second direction.

The first conductive layer 321 may be disposed to directly contact thelower surface of the first bonding part 121. The first conductive layer321 may be electrically connected to the first bonding part 121. Thefirst conductive layer 321 may be disposed to be surrounded by the firstpackage body 113.

The second conductive layer 322 may be provided in the second openingTH2. The second conductive layer 322 may be disposed under the secondbonding part 122. A width of the second conductive layer 322 may beprovided to be less than the width of the second bonding part 122.

The second bonding part 122 may have a width in the second directionperpendicular to the first direction in which the second opening TH2 isformed. The width of the second bonding part 122 may be provided to begreater than the width of the second opening TH2 in the seconddirection.

The second conductive layer 322 may be disposed to directly contact thelower surface of the second bonding part 122. The second conductivelayer 322 may be electrically connected to the second bonding part 122.The second conductive layer 322 may be disposed to be surrounded by thefirst package body 113.

The first conductive layer 321 and the second conductive layer 322 maycomprise at least one material selected from a group including Ag, Au,Pt, Sn, and Cu, or an alloy thereof. However, the present invention isnot limited thereto, and a material capable of securing a conductivefunction may be used as each of the first conductive layer 321 and thesecond conductive layer 322.

For example, each of the first conductive layer 321 and the secondconductive layer 322 may be formed using a conductive paste. Theconductive paste may comprise a solder paste, a silver paste, and thelike and may be provided as a multilayer that is formed of differentmaterials or a multilayer or single layer formed of an alloy. Forexample, each of the first conductive layer 321 and the secondconductive layer 322 may comprise a Sn—Ag—Cu (SAC) material.

According to an embodiment, the first conductive layer 321 may beelectrically connected to the first bonding part 121, and the secondconductive layer 322 may be electrically connected to the second bondingpart 122. For example, external power may be supplied to the firstconductive layer 321 and the second conductive layer 322, and thus, thelight emitting device 120 may be driven.

According to the light emitting device package 100 according to theembodiment, as illustrated in FIGS. 1 to 3 , the first resin 130provided in the recess R may be provided between the lower surface ofthe light emitting device 120 and the upper surface of the package body110. When viewed from the upper side of the light emitting device 120,the first resin 130 may be provided in a closed loop shape around thefirst and second bonding parts 121 and 122. Also, when viewed from theupper side of the light emitting device 120, the first resin 130 may beprovided in a closed loop shape around the first and second openings TH1and TH2.

The first resin 130 may perform a function of stably fixing the lightemitting device 120 to the package body 110. Also, the first resin 130may contact the side surfaces of the first and second bonding parts 121and 122 and may be disposed around the first and second bonding parts121 and 122. When viewed from the upper side of the light emittingdevice 120, the first resin 130 may be disposed so that the first andsecond openings TH1 and TH2 are isolated from an outer region in whichthe second resin 140 is provided.

The first resin 130 may prevent the first and second conductive layers321 and 322 provided in the first and second openings TH1 and TH2 frombeing separated from the closed loop of the recess R to flow in theoutward direction of the light emitting device 120.

When viewed from the upper side of the light emitting device 120, if thefirst and second conductive layers 321 and 322 move outward from thelight emitting device 120, the first and second conductive layers 321and 322 may be spread along the side surface of the light emittingdevice 120. As described above, when the first and second conductivelayers 321 and 322 move to the side surfaces of the light emittingdevice 120, the first conductivity type semiconductor layer and thesecond conductivity type semiconductor layer of the light emittingdevice 120 may be electrically short-circuited. Also, when the first andsecond conductive layers 321 and 322 move to the side surface of thelight emitting device 120, light extraction efficiency of the lightemitting device 120 may be deteriorated.

However, according to an embodiment, since circumferential regions ofthe first and second bonding parts 121 and 122 may be sealed by thefirst resin 130, the first and second conductive layers 321 and 322 maybe prevented from moving outward from the areas of the first and secondopenings TH1 and TH2.

Therefore, according to the light emitting device package 100 of anembodiment, the first and second conductive layers 321 and 322 may beprevented from moving to the side surface of the light emitting device120 and also may be prevented from being electrically short-circuited toimprove the light extraction efficiency.

Next, a method of manufacturing a light emitting device packageaccording to an embodiment of the present invention will be describedwith reference to FIGS. 4 to 8 .

In description of the semiconductor device according to an embodimentwith reference to FIG. 8 , the description overlapping with thosedescribed with reference to FIGS. 1 and 3 may be omitted.

First, according to a method of manufacturing the light emitting devicepackage according to an embodiment of the present invention, asillustrated in FIG. 4 , a support frame B and a plurality of first bodyarrays A1, A2, A3, and A4 disposed in the support frame B may beprovided.

The support frame B may stably support the plurality of first bodyarrays A1, A2, A3, and A4. The support frame B may be provided as aninsulation frame or a conductive frame.

For example, the plurality of first body arrays A1, A2, A3, and A4 maybe formed through an injection process or the like.

FIG. 4 illustrates a case in which four first body arrays A1, A2, A3,and A4 are disposed on the support frame B, but the plurality of firstbody arrays may be provided in three or less or provided in five ormore. Also, the plurality of first body arrays may be arranged in ashape having a plurality of rows and a plurality of columns or may bearranged in a shape having one row and a plurality of columns.

Each of the plurality of first body arrays A1, A2, A3, and A4 maycomprise a plurality of sub body arrays A11, A12, . . . .

Each of the sub body arrays A11, A12, . . . , may comprise the firstpackage body 113, the first and second openings TH1 and TH2, and therecess R as described with reference to FIGS. 1 to 3 . Also, each of thesub body arrays A11, A12, . . . may have a structure similar to eachother.

The first opening TH1 may be provided in the first package body 113. Thefirst opening TH1 may be provided to pass through the first package body113. The first opening TH1 may be provided to pass through the top andlower surfaces of the first package body 113 in a first direction.

The second opening TH2 may be provided in the first package body 113.The second opening TH2 may be provided to pass through the first packagebody 113. The second opening TH2 may be provided to pass through the topand lower surfaces of the first package body 113 in the first direction.

The first opening TH1 and the second opening TH2 may be spaced apartfrom each other.

The recess R may be provided in the first package body 113. The recess Rmay be provided to be recessed from the upper surface to the lowersurface of the first package body 113.

Next, according to the method of manufacturing the light emitting devicepackage of the embodiment, as illustrated in FIG. 5 , the light emittingdevice 120 may be disposed on each of the sub body arrays A11, A12, . .. .

As described with reference to FIGS. 1 to 3 , a first resin 130 may beprovided in the recess R, and the light emitting device 120 may bemounted on the first resin 130.

The first resin 130 may be provided in the recess R through a dotingmanner or the like. For example, the first resin 130 may be provided ina predetermined amount in a region, in which the recess R is formed, andmay be provided to overflow the recess R.

Also, the light emitting device 120 may be provided on the first packagebody 113.

According to an embodiment, the recess R may be utilized to serve as asort key while the light emitting device 120 is disposed on the firstpackage body 113.

The light emitting device 120 may be fixed to the first package body 113by the first resin 130. A portion of the first resin 130 provided in therecess R may move toward the first bonding part 121 and the secondbonding part 122, and may be cured. Accordingly, the first resin 130 maybe provided on a wide area between the lower surface of the lightemitting device 120 and the upper surface of the first package body 113to improve the fixing force between the first light emitting device 120and the package body 113.

According to an embodiment, the first opening TH1 may be disposed underthe first bonding part 121 of the light emitting device 120. The firstopening TH1 may be provided to overlap the first bonding part 121 of thelight emitting device 120. The first opening TH1 may be provided tooverlap the first bonding part 121 of the light emitting device 120 inthe first direction from the upper surface to the lower surface of thefirst package body 113.

The second opening TH2 may be disposed under the second bonding part 122of the light emitting device 120. The second opening TH2 may be providedto overlap the second bonding part 122 of the light emitting device 120.The second opening TH2 may be provided to overlap the second bondingpart 122 of the light emitting device 120 in the first direction fromthe upper surface to the lower surface of the first package body 113.

The first resin 130 may perform a function of stably fixing the lightemitting device 120 to the package body 110. Also, the first resin 130may contact the side surfaces of the first and second bonding parts 121and 122 and may be disposed around the first and second bonding parts121 and 122.

Next, according to the method of manufacturing the light emitting devicepackage according to an embodiment, as described with reference to FIGS.1 to 3 , the first and second conductive layers 321 and 322 may beformed in the first and second openings TH1 and TH2 of the sub bodyarrays A11, A12, . . . , respectively.

The first conductive layer 321 may be provided in the first opening TH1.The first conductive layer 321 may be disposed under the first bondingpart 121. A width of the first conductive layer 321 may be less than thewidth of the first bonding part 121.

The first bonding part 121 may have a width in a second directionperpendicular to the first direction in which the first opening TH1 isformed. The width of the first bonding part 121 may be provided to begreater than a width of the first opening TH1 in the second direction.

The first conductive layer 321 may be disposed to directly contact thelower surface of the first bonding part 121. The first conductive layer321 may be electrically connected to the first bonding part 121. Thefirst conductive layer 321 may be disposed to be surrounded by the firstpackage body 113.

The second conductive layer 322 may be provided in the second openingTH2. The second conductive layer 322 may be disposed under the secondbonding part 122. A width of the second conductive layer 322 may beprovided to be less than the width of the second bonding part 122.

The second bonding part 122 may have a width in the second directionperpendicular to the first direction in which the second opening TH2 isformed. The width of the second bonding part 122 may be provided to begreater than the width of the second opening TH2 in the seconddirection.

The second conductive layer 322 may be disposed to directly contact thelower surface of the second bonding part 122. The second conductivelayer 322 may be electrically connected to the second bonding part 122.The second conductive layer 322 may be disposed to be surrounded by thefirst package body 113.

The first conductive layer 321 and the second conductive layer 322 maycomprise one material selected from a group including Ag, Au, Pt, Sn,and Cu, or an alloy thereof. However, the present invention is notlimited thereto, and a material capable of securing a conductivefunction may be used as each of the first conductive layer 321 and thesecond conductive layer 322.

For example, each of the first conductive layer 321 and the secondconductive layer 322 may be formed using a conductive paste. Theconductive paste may comprise a solder paste, a silver paste, and thelike and may be provided as a multilayer that is formed of differentmaterials or a multilayer or single layer formed of an alloy. Forexample, each of the first conductive layer 321 and the secondconductive layer 322 may comprise a Sn—Ag—Cu (SAC) material.

Since the upper regions of the first and second openings TH1 and TH2 aresealed by the first resin 130, the first and second conductive layers321 and 322 provided in the first and second openings TH1 and TH2 may beprevented from being spread to move downward from the lower surface ofthe light emitting device 120.

As described above, since the first and second openings TH1 and TH2 aresealed by the first resin 130, the first and second conductive layers321 and 322 provided in the first and second openings TH1 and TH2 may beprevented to moving upward from the upper surface of the first packagebody 113.

Meanwhile, according to the method of manufacturing the light emittingdevice package of the embodiment, as illustrated in FIG. 6 , a secondbody array D may be provided.

The second body array D may comprise a plurality of sub body arrays E11,E12, . . . . For example, as illustrated in FIG. 6 , the second bodyarray D may comprise a plurality of sub body arrays E11, E12, . . . thatare arranged in one direction. Also, the second body array D maycomprise a plurality of sub body arrays E11, E12, . . . , having amatrix shape arranged in a plurality of rows and a plurality of columns.

As illustrated in FIG. 6 , each of the plurality of sub body arrays E11,E12, . . . may comprise an opening passing through in a direction froman upper surface to a lower surface thereof.

Next, according to the method of manufacturing the light emitting devicepackage of the embodiment, as illustrated in FIG. 7 , the second bodyarray D may be provided on the first body array A1, A2, A3, and A4.

The first body arrays A1, A2, A3, and A4 and the second body array D maybe bonded through the adhesion layer 160, as described with reference toFIGS. 1 to 3 .

For example, the sub body array E11 may be disposed on the sub bodyarray A11, and the sub body array E12 may be disposed on the sub bodyarray A12.

Meanwhile, in an embodiment, the first body arrays A1, A2, A3, and A4and the second body array D may comprise different materials. Forexample, the first body arrays A1, A2, A3, and A4 and the second bodyarray D may be formed of different materials in different processes andthen bonded to each other through the adhesion layer 160.

The adhesion layer 160 may be disposed between the first body arrays A1,A2, A3, and A4 and the second body array D. The adhesion layer 160 maybe disposed on an upper surface of each of the first body arrays A1, A2,A3, and A4. The adhesion layer 160 may be disposed on a lower surface ofthe second body array D.

The adhesion layer 160 may comprise at least one of an epoxy-basedmaterial, a silicone-based material, or a hybrid material including theepoxy-based material and the silicone-based material. Also, the adhesionlayer 160 may reflect light emitted from the light emitting device 120.When the adhesion layer 160 has a reflective function, the adhesionlayer 160 may comprise white silicone.

Meanwhile, each of the first body arrays A1, A2, A3, and A4 and thesecond body array D may comprise at least one selected from resinmaterials including polyphthalamide (PPA), polychloro triphenyl (PCT), aliquid crystal polymer (LCP), polyamide9T (PAST), and silicone, an epoxymolding compound (EMC), a silicone molding compound (SMC), polyimide(PI), and the like, as a base material.

Also, each of the first body arrays A1, A2, A3, and A4 and the secondbody array D may comprise at least one of a reflective material or awavelength conversion material. Also, the first body arrays A1, A2, A3,and A4 and the second body array D may not comprise the reflectivematerial and the wavelength conversion material.

The first body arrays A1, A2, A3, and A4 and the second body array D maycomprise different base materials.

For example, the first body arrays A1, A2, A3, and A4 may comprise thereflective material, and the second body array D may comprise thewavelength conversion material. Also, the first body arrays A1, A2, A3,and A4 may comprise the wavelength conversion material, and the secondbody array D may comprise the reflective material.

According to an embodiment, the first body arrays A1, A2, A3, and A4 maycomprise the reflective material, and the second body array D maycomprise the reflective material and the wavelength conversion material.Also, the first body arrays A1, A2, A3, and A4 may comprise thereflective material and the wavelength conversion material, and thesecond body array D may comprise the wavelength conversion material.

In the light emitting device package according to an embodiment, thefirst body arrays A1, A2, A3, and A4 and the second body array Dincluding different base materials are separately formed in differentprocesses and then be manufactured in a modular manner through anoptional combination that is capable of satisfying characteristicsrequired for the application product.

Next, a second resin 140 may be formed in the cavity provided by theopening of the second body array D, as described with reference to FIGS.1 to 3 .

The second resin 140 may be provided on the light emitting device 120.The second resin 140 may be disposed on the first body arrays A1, A2,A3, and A4. The second resin 140 may be disposed in the cavity Cprovided by the second body array D.

The second resin 140 may comprise an insulation material. Also, thesecond resin 140 may comprise a wavelength conversion material thatreceives light emitted from the light emitting device 120 to providelight of which a wavelength is converted. For example, the second resin140 may comprise a phosphor, a quantum dot, and the like.

Next, according to the method of manufacturing the light emitting devicepackage of the embodiment, in the state in which the first body arraysA1, A2, A3, and A4 and the second body array D are bonded to each other,an individual light emitting device package may be manufactured througha separation process such as dicing or scribing as illustrated in FIG. 8.

As illustrated in FIG. 8 , the light emitting device package 100according to an embodiment may comprise a package body in which a firstpackage body 113 and a second package body 117 are manufactured to bebonded to each other in a modular manner.

In the light emitting device package 100 according to an embodiment, asdescribed above with reference to FIGS. 1 to 8 , while the package body110 is formed, a lead frame according to the related art is not applied.

In the case of the light emitting device package to which the lead frameaccording to the related art is applied, a process of forming the leadframe is additionally required, but the method of manufacturing thelight emitting device package according to an embodiment of the presentinvention does not require the process of forming the lead frame. As aresult, the method of manufacturing the light emitting device packageaccording to an embodiment of the present invention has an advantage inreducing a process time and material.

Also, in the case of the light emitting device package to which the leadframe according to the related art is applied, a plating process usingsilver plating or the like has to be added to prevent the lead framefrom being deteriorated. However, according to the method ofmanufacturing the light emitting device package of an embodiment of thepresent invention, since the lead frame is not required, the additionprocess such as the silver plating is not required. As described above,the method of manufacturing the light emitting device package accordingto an embodiment of the present invention may have an advantage inreducing manufacturing costs and improving manufacturing yield.

Also, there is an advantage that may be miniaturized when compared tothe light emitting device package to which the lead frame according tothe related art is applied.

In the light emitting device package 100 according to an embodiment, apower may be connected to the first bonding part 121 through the firstconductive layer 321 provided in the first opening TH1, and also, apower may be connected to the second bonding part 122 through the secondconductive layer 322 provided in the second opening TH2.

Accordingly, the light emitting device 120 may be driven by drivingpower supplied through the first bonding part 121 and the second bondingpart 122. Also, light emitted from the light emitting device 120 may beprovided in an upper direction of the package body 110.

Meanwhile, the light emitting device package 100 according to anembodiment described above may be provided to be mounted on a submountor a circuit board.

However, when the light emitting device package is mounted on thesubmount or the circuit board, a high temperature process such as areflow process or a heat treatment process may be applied. Here, in thereflow or heat treatment process, a re-melting phenomenon occurs in abonding area between the lead frame and the light emitting deviceprovided in the light emitting device package to deteriorate thestability of the electrical connection and the physical coupling.

However, according to the light emitting device package and the methodof manufacturing the light emitting device package of an embodiment, thefirst bonding part 121 and the second bonding part 122 of the lightemitting device 120 according to an embodiment may receive the drivingpower through the first and second conductive layers 321 and 322. Also,a melting point of each of the first and second conductive layers 321and 322 may be selected to have a higher value than a melting point ofthe general bonding material.

Accordingly, the light emitting device package 100 according to anembodiment does not cause the re-melting phenomenon even when bonded toa main substrate through the reflow process, and thus, the electricalconnection and the physical bonding force may not be degraded.

Also, according to the light emitting device package 100 and the methodof manufacturing the light emitting device package of an embodiment,since the light emitting device 120 is mounted on the first body arraysA1, A2, A3, and A4 by using the conductive paste, in the process ofmanufacturing the light emitting device package, the package body 110does not need to be exposed to a high temperature. Therefore, accordingto an embodiment, the package body 110 may be prevented from beingdamaged or discolored due to the exposure at the high temperature.

For example, the package body 110 may comprise at least one materialselected from a group including a polyphthalamide (PPA) resin, apolycyclohexylenedimethylene terephthalate (PCT) resin, an epoxy moldingcompound (EMC) resin, a silicone molding compound (SMC) resin, and apolyimide (PI) resin.

Next, another example of the light emitting device package according toan embodiment of the present invention will be described with referenceto FIG. 9 . FIG. 9 is a view illustrating another example of the lightemitting device package according to an embodiment of the presentinvention.

In the light emitting device package of FIG. 9 according to anembodiment of the present invention, an example in which the lightemitting device package 100 described with reference to FIGS. 1 to 8 ismounted on a circuit board 310 will be described.

In the description of the light emitting device package according to anembodiment of the present invention with reference to FIG. 9 ,descriptions overlapping with those described with reference to FIGS. 1to 8 may be omitted.

As illustrated in FIG. 9 , the light emitting device package accordingto an embodiment may comprise a circuit board 310, a package body 110,and a light emitting device 120.

The circuit board 310 may comprise a first pad 311, a second pad 312,and a support substrate 313. A power supply circuit controlling drivingof the light emitting device 120 may be provided on the supportsubstrate 313.

The package body 110 may be disposed on the circuit board 310. The firstpad 311 and the first bonding part 121 may be electrically connected toeach other. The second pad 312 and the second bonding part 122 may beelectrically connected to each other.

Each of the first pad 311 and the second pad 312 may comprise aconductive material. For example, each of the first pad 311 and thesecond pad 312 may comprise at least one material selected from thegroup including Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, andAl, or an alloy thereof. Each of the first pad 311 and the second pad312 may be provided in a single layer or multiple layer.

The package body 110 may comprise a first package body 113 and a secondpackage body 117.

The package body 110 may comprise a first opening TH1 and a secondopening TH2 passing through from an upper surface to a lower surfacethereof in the first direction. The first opening TH1 and the secondopening TH2 may pass through from the upper surface to the lower surfaceof the first package body 113 in the first direction.

Meanwhile, according to an embodiment, the first package body 113 andthe second package body 117 may comprise different materials. Forexample, the first package body 113 and the second package body 117 maybe bonded to each other through an adhesion layer 160 after being formedof different materials in different processes.

The adhesion layer 160 may be disposed between the first package body113 and the second package body 117. The adhesion layer 160 may bedisposed on the upper surface of the first package body 113. Theadhesion layer 160 may be disposed on the lower surface of the secondpackage body 117. The adhesion layer 160 may be disposed around thelight emitting device 120 to provide the cavity.

The adhesion layer 160 may comprise at least one of an epoxy-basedmaterial, a silicone-based material, or a hybrid material including theepoxy-based material and the silicone-based material.

Also, the adhesion layer 160 may reflect light emitted from the lightemitting device 120. When the adhesion layer 160 may have reflectivefunction, the adhesive may comprise white silicone.

Each of the first package body 113 and the second package body 117 maycomprise at least one selected from resin materials includingpolyphthalamide (PPA), polychloro triphenyl (PCT), a liquid crystalpolymer (LCP), polyamide9T (PAST), a silicone, an epoxy molding compound(EMC), a silicone molding compound (SMC), polyimide (PI), and the like,as a base material.

Also, each of the first package body 113 and the second package body 117may comprise at least one of the reflective material or the wavelengthconversion material. Also, the first package body 113 and the secondpackage body 117 may not comprise the reflective material and thewavelength conversion material.

The first package body 113 and the second package body 117 may comprisedifferent base materials.

For example, the first package body 113 may comprise a reflectivematerial and the second package body 117 may comprise a wavelengthconversion material. Also, the first package body 113 may comprise thewavelength conversion material, and the second package body 117 maycomprise the reflective material.

According to an embodiment, the first package body 113 may comprise thereflective material, and the second package body 117 may comprise thereflective material and the wavelength conversion material. Also, thefirst package body 113 may comprise the reflective material and thewavelength conversion material, and the second package body 117 maycomprise the wavelength conversion material.

In the light emitting device package 100 according to the embodiment,the first package body 113 and the second package body 117 includingdifferent base materials may be formed separately in different processesand then be manufactured in a modular manner through an optionalcombination that is capable of satisfying characteristics required forthe application product.

The light emitting device 120 may comprise a first bonding part 121, asecond bonding part 122, a light emitting structure 123, and a substrate124.

The light emitting device 120 may be disposed on the package body 110.The light emitting device 120 may be disposed on the first package body113. The light emitting device 120 may be disposed in a cavity Cprovided by the second package body 117.

The first bonding part 121 may be disposed on the lower surface of thelight emitting device 120. The second bonding part 122 may be disposedon the lower surface of the light emitting device 120. The first bondingpart 121 and the second bonding part 122 may be spaced apart from eachother on the lower surface of the light emitting device 120.

The first bonding part 121 may be disposed between the light emittingstructure 123 and the first package body 113. The second bonding part122 may be disposed between the light emitting structure 123 and thefirst package body 113.

The first opening TH1 may be disposed under the first bonding part 121of the light emitting device 120. The first opening TH1 may be providedto overlap the first bonding part 121 of the light emitting device 120.The first opening TH1 may be provided to overlap the first bonding part121 of the light emitting device 120 in the first direction from theupper surface to the lower surface of the first package body 113.

The second opening TH2 may be disposed under the second bonding part 122of the light emitting device 120. The second opening TH2 may be providedto overlap the second bonding part 122 of the light emitting device 120.The second opening TH2 may be provided to overlap the second bondingpart 122 of the light emitting device 120 in the first direction fromthe upper surface to the lower surface of the first package body 113.

The first opening TH1 and the second opening TH2 may be spaced apartfrom each other. The first opening TH1 and the second opening TH2 may bespaced apart from each other under the lower surface of the lightemitting device 120.

As illustrated in FIG. 9 , the light emitting device package accordingto an embodiment may comprise a first conductive layer 321 and a secondconductive layer 322.

The first conductive layer 321 may be disposed in the first opening TH1.The first conductive layer 321 may be disposed to directly contact thelower surface of the first bonding part 121. The first conductive layer321 may be provided to overlap the first bonding part 121 in a verticaldirection.

An upper surface of the first conductive layer 321 may be disposed onthe same plane as the upper surface of the first package body 113. Alower surface of the first conductive layer 321 may be provided on thesame plane as the lower surface of the first package body 113.

The second conductive layer 322 may be disposed in the second openingTH2. The second conductive layer 322 may be disposed to directly contactthe lower surface of the second bonding part 122. The second conductivelayer 322 may be provided to overlap the second bonding part 122 in thevertical direction.

An upper surface of the second conductive layer 322 may be disposed onthe same plane as the upper surface of the first package body 113. Alower surface of the second conductive layer 322 may be provided on thesame plane as the lower surface of the first package body 113.

For example, each of the first conductive layer 321 and the secondconductive layer 322 may comprise at least one material selected fromthe group including Ag, Au, Pt, Sn, and Cu, or an alloy thereof.

The light emitting device package according to an embodiment maycomprise a metal layer 430, as illustrated in FIG. 9 .

The metal layer 430 may be disposed under the first and secondconductive layers 321 and 322. The metal layer 430 may be disposed onthe lower surfaces of the first and second conductive layers 321 and322. Also, according to an embodiment, the metal layer 430 may beprovided on the lower surface of the first package body 113 adjacent tothe first and second openings TH1 and TH2.

The metal layer 430 may be formed of at least one material selected fromthe group including titanium (Ti), copper (Cu), nickel (Ni), gold (Au),chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), andphosphorus (P), or an optional alloy thereof.

According to an embodiment, the first pad 311 and the first conductivelayer 321 of the circuit board 310 may be electrically connected to eachother by the metal layer 430. Also, the second pad 312 and the secondconductive layer 322 of the circuit board 310 may be electricallyconnected to each other by the metal layer 430.

Also, the light emitting device package according to the embodiment maycomprise a recess R, as illustrated in FIG. 9 . The recess R may beprovided to be recessed from the lower surface of the cavity C to thelower surface of the package body 110.

The recess R may be provided in the first package body 113. The recess Rmay be provided to be recessed from the upper surface to the lowersurface of the first package body 113. The recess R may be disposedunder the light emitting device 120.

The recess R may be provided under the light emitting device 120 and maybe provided between the first bonding part 121 and the second bondingpart 122. The recess R may be disposed under the light emitting device120 around the first and second bonding parts 121 and 122.

The light emitting device package according to an embodiment maycomprise a first resin 130, as illustrated in FIG. 9 .

The first resin 130 may be disposed in the recess R. The first resin 130may be disposed between the light emitting device 120 and the firstpackage body 113. The first resin 130 may be disposed between the firstbonding part 121 and the second bonding part 122. For example, the firstresin 130 may be disposed to contact a side surface of the first bondingpart 121 and a side surface of the second bonding part 122.

The first resin 130 may be disposed around the first bonding part 121 toseal the upper region of the first opening TH1. The first resin 130 maybe disposed around the second bonding part 122 to seal the upper regionof the second opening TH1.

The first resin 130 may provide stable fixing force between the lightemitting device 120 and the first package body 113. For example, thefirst resin 130 may be disposed to directly contact the upper surface ofthe first package body 113. Also, the first resin 130 may be disposed todirectly contact the lower surface of the light emitting device 120.

For example, the first resin 130 may comprise at least one of anepoxy-based material, a silicone-based material, or a hybrid materialincluding the epoxy-based material and the silicone-based material.Also, the first resin 130 may reflect light emitted from the lightemitting device 120. When the first resin 130 has a reflective function,the first resin 130 may comprise white silicone.

When the first resin 130 has the reflection function, the first resin130 may be formed of a material including, for example, TiO₂, SiO₂, orthe like. The first resin 130 may be referred to as an adhesive.

According to an embodiment, a depth of the recess R may be less than adepth of the first opening TH1 or a depth of the second opening TH2.

The depth of the recess R may be determined in consideration of adhesionforce of the first resin 130. Also, the recess R may have a depth T1 inconsideration of the stable strength of the first package body 113and/or have a depth T1 determined to prevent the light emitting devicepackage 100 from being cracked by heat emitted from the light emittingdevice 120.

The recess R may provide an appropriate space, in which an underfillprocess is performed, under the light emitting device 120. The recess Rmay be provided to be greater than or equal to a first depth so that thefirst resin 130 is sufficiently provided between the lower surface ofthe light emitting device 120 and the upper surface of the first packagebody 113. Also, the recess R may be provided to be less than or equal toa second depth so as to provide stable strength of the first packagebody 113.

A depth and width of the recess R may affect the formation position andthe fixing force of the first resin 130. The depth and width of therecess R may be determined so that sufficient fixing force may beprovided by the first resin 130 disposed between the first package body113 and the light emitting device 120.

For example, the depth of the recess R may be provided to several tensof micrometers. The depth of the recess R may be provided in a rangefrom 40 micrometers to 60 micrometers.

Also, the width W3 of the recess R may be provided to hundreds ofmicrometers. The width W3 of the recess R may be provided in a rangefrom 140 micrometers to 160 micrometers. For example, the width W3 ofthe recess R may be provided to 150 micrometers.

The depth of the first opening TH1 may be provided corresponding to athickness of the first package body 113. The depth of the first openingTH1 may be provided to a thickness that is enough to maintain the stablestrength of the first package body 113.

For example, the depth of the first opening TH1 may be provided toseveral hundred micrometers. The depth of the first opening TH1 may beprovided in a range from 180 micrometers to 220 micrometers. Forexample, the depth of the first opening TH1 may be provided to 200micrometers.

For example, a thickness obtained by subtracting the depth of the recessR from the depth of the first opening TH1 may be selected to be at least100 micrometers or more. This is in consideration of a thickness of thefirst package body 113, which is capable of providing crack free, in aninjection process.

According to an embodiment, the depth of the first opening TH1 may beprovided 2 times to 10 times the depth of the recess R. For example,when the depth of the first opening TH1 is provided to 200 micrometers,the depth of the recess R may be provided in a range from 20 micrometersto 100 micrometers.

Also, the light emitting device package according to an embodiment maycomprise a second resin 140, as illustrated in FIG. 9 .

The second resin 140 may be provided on the light emitting device 120.The second resin 140 may be disposed on the first package body 113. Thesecond resin 140 may be disposed in the cavity C provided by the secondpackage body 117.

In the light emitting device package according to an embodiment, asdescribed with reference to FIG. 9 , while the package body 110 isformed, a lead frame according to the related art is not applied.

In the case of the light emitting device package to which the lead frameaccording to the related art is applied, a process of forming the leadframe is additionally required, but the method of manufacturing thelight emitting device package according to an embodiment of the presentinvention does not require the process of forming the lead frame. As aresult, the method of manufacturing the light emitting device packageaccording to an embodiment of the present invention has an advantage inreducing a process time and material.

Also, in the case of the light emitting device package to which the leadframe according to the related art is applied, a plating process usingsilver plating or the like has to be added to prevent the lead framefrom being deteriorated. However, according to the light emitting devicepackage according to an embodiment of the present invention, since thelead frame is not required, the addition process such as the silverplating is not required. Accordingly, embodiments of the light emittingdevice package may solve the problem of discoloration of the materialsuch as silver plating and may reduce manufacturing costs due to theadvantage in which the process is omitted. Therefore, the method ofmanufacturing the light emitting device package according to anembodiment of the present invention may have an advantage in reducingmanufacturing costs and improving manufacturing yield and productreliability.

Also, there is an advantage that may be miniaturized when compared tothe light emitting device package to which the lead frame according tothe related art is applied.

In the light emitting device package 100 according to an embodiment, apower may be connected to the first bonding part 121 through the firstconductive layer 321 provided in the first opening TH1, and also, apower may be connected to the second bonding part 122 through the secondconductive layer 322 provided in the second opening TH2.

Accordingly, the light emitting device 120 may be driven by drivingpower supplied through the first bonding part 121 and the second bondingpart 122. Also, light emitted from the light emitting device 120 may beprovided in an upper direction of the package body 110.

Meanwhile, the light emitting device package 100 according to anembodiment described above may be provided to be mounted on a submountor a circuit board.

However, when the light emitting device package according to the relatedart is mounted on the submount or the circuit board, a high temperatureprocess such as a reflow process may be applied. Here, in the reflowprocess, a re-melting phenomenon occurs in a bonding area between thelead frame and the light emitting device provided in the light emittingdevice package to deteriorate the stability of the electrical connectionand the physical coupling.

However, according to the light emitting device package and the methodof manufacturing the light emitting device package according to anembodiment, the first bonding part 121 and the second bonding part 122of the light emitting device 120 according to an embodiment may receivethe driving power through the first and second conductive layers 321 and322. Also, a melting point of each of the first and second conductivelayers 321 and 322 may be selected to have a higher value than a meltingpoint of the general bonding material.

Accordingly, the light emitting device package 100 according to anembodiment does not cause the re-melting phenomenon even when bonded toa main substrate through the reflow process, and thus, the electricalconnection and the physical bonding force may not be degraded.

Also, according to the light emitting device package 100 and the methodof manufacturing the light emitting device package according to anembodiment, since the light emitting device 120 is mounted on the firstbody arrays A1, A2, A3, and A4 by using the conductive paste, in theprocess of manufacturing the light emitting device package, the packagebody 110 does not need to be exposed to a high temperature. Therefore,according to an embodiment, the package body 110 may be prevented frombeing damaged or discolored due to the exposure at the high temperature.

For example, the package body 110 may comprise at least one materialselected from the group including a polyphthalamide (PPA) resin, apolycyclohexylenedimethylene terephthalate (PCT) resin, an epoxy moldingcompound (EMC) resin, a silicone molding compound (SMC) resin, and apolyimide (PI) resin.

Next, another example of the light emitting device package according toan embodiment will be described with reference to FIG. 10 .

FIG. 10 is a view illustrating further another example of the lightemitting device package according to an embodiment of the presentinvention. In the description of the light emitting device packageaccording to an embodiment with reference to FIG. 10 , descriptionsoverlapping with those described with reference to FIGS. 1 to 9 may beomitted.

The light emitting device package according to an embodiment maycomprise a package body 110 and a light emitting device 120, asillustrated in FIG. 10 .

The package body 110 may comprise a first package body 113 and a secondpackage body 117. The second package body 117 may be disposed on thefirst package body 113. The second package body 117 may be disposedaround an upper surface of the first package body 113. The secondpackage body 117 may provide a cavity C in the upper surface of thefirst package body 113. The second package body 117 may comprise anopening passing through the upper and lower surfaces thereof.

In other words, the first package body 113 may be referred to as a lowerbody, and the second package body 117 may be referred to as an upperbody. Also, according to an embodiment, the package body 110 may notinclude the second package body 117 that provides the cavity but maycomprise only the first package body 113 that provides a flat uppersurface.

The second package body 117 may reflect light emitted from the lightemitting device 120 in an upward direction. The second package body 117may be disposed to be inclined with respect to the upper surface of thefirst package body 113.

The package body 110 may comprise the cavity C. The cavity may comprisea lower surface and a side surface inclined from the lower surface tothe upper surface of the package body 110.

According to an embodiment, the package body 110 may have a structurehaving the cavity C or may have a structure having a flat upper surfacewithout the cavity C.

The first package body 113 may comprise a first frame 111 and a secondframe 112. The first frame 111 and the second frame 112 may be spacedapart from each other.

The first package body 113 may comprise a first body 115. The first body115 may be disposed between the first frame 111 and the second frame112. The first body 115 may perform a function of a kind of electrodeseparation line. The first body 115 may also be referred to as aninsulation member.

The first body 115 may be disposed on the first frame 111. Also, thefirst body 115 may be disposed on the second frame 112.

Each of the first frame 111 and the second frame 112 may be provided asan insulation frame. The first frame 111 and the second frame 112 maystably provide structural strength of the package body 110.

Also, each of the first frame 111 and the second frame 112 may beprovided as a conductive frame. The first frame 111 and the second frame112 may stably provide structural strength of the package body 110 andmay be electrically connected to the light emitting device 120.

For example, the package body 110 may be formed of at least one selectedfrom the group including polyphthalamide (PPA), polychloro triphenyl(PCT), a liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, anepoxy molding compound (EMC), a silicone molding compound (SMC),ceramic, polyimide (PI), photo sensitive glass (PSG), sapphire (Al₂O₃),and the like. Also, the package body 110 may comprise a reflectivematerial of a high refractive filler, such as TiO₂ and SiO₂. The packagebody 110 may comprise a wavelength conversion material such as a quantumdot and a phosphor.

According to an embodiment, the first package body 113 and the secondpackage body 117 may comprise different materials. For example, thefirst package body 113 and the second package body 117 may be bonded toeach other after being formed of different materials in differentprocesses. For example, the first package body 113 and the secondpackage body 117 may be bonded to each other through an adhesion layer160.

The adhesion layer 160 may be disposed between the first package body113 and the second package body 117. The adhesion layer 160 may bedisposed on the upper surface of the first package body 113. Theadhesion layer 160 may be disposed on the lower surface of the secondpackage body 117. The adhesion layer 160 may be disposed around thelight emitting device 120 to provide the cavity.

The adhesion layer 160 may comprise at least one of an epoxy-basedmaterial, a silicone-based material, or a hybrid material including theepoxy-based material and the silicone-based material. Also, the adhesionlayer 160 may reflect light emitted from the light emitting device 120.When the adhesion layer 160 has a reflective function, the adhesionlayer 160 may comprise white silicone.

Meanwhile, each of the first package body 115 and the second packagebody 117 may comprise at least one selected from resin materialsincluding polyphthalamide (PPA), polychloro triphenyl (PCT), a liquidcrystal polymer (LCP), polyamide9T (PA9T), a silicone, an epoxy moldingcompound (EMC), a silicone molding compound (SMC), polyimide (PI), andthe like, as a base material.

Also, each of the first body 115 and the second package body 117 maycomprise at least one of the reflective material or the wavelengthconversion material. Also, the first body 115 and the second packagebody 117 may not include the reflective material and the wavelengthconversion material. Each of the first body 115 and the second packagebody 117 may be formed of a transparent resin.

The first body 115 and the second package body 117 may comprisedifferent base materials. The first body 115 and the second package body117 may comprise different resins.

For example, the first body 115 may comprise a reflective material andthe second package body 117 may comprise a wavelength conversionmaterial. Also, the first body 115 may comprise the wavelengthconversion material, and the second package body 117 may comprise thereflective material.

According to an embodiment, the first body 115 may comprise thereflective material, and the second package body 117 may comprise thereflective material and the wavelength conversion material. Also, thefirst body 115 may comprise the reflective material and the wavelengthconversion material, and the second package body 117 may comprise thewavelength conversion material.

In the light emitting device package according to the embodiment, thefirst package body 113 and the second package body 117 includingdifferent base materials may be formed separately in different processesand then be manufactured in a modular manner through an optionalcombination that is capable of satisfying characteristics required forthe application product.

According to an embodiments, the light emitting device 120 may comprisea first bonding part 121, a second bonding part 122, a light emittingstructure 123, and a substrate 124.

The light emitting device 120 may be disposed on the package body 110.The light emitting device 120 may be disposed on the first frame 111 andthe second frame 112. The light emitting device 120 may be disposed inthe cavity C provided by the package body 110.

The first bonding part 121 may be disposed on the lower surface of thelight emitting device 120. The second bonding part 122 may be disposedon the lower surface of the light emitting device 120. The first bondingpart 121 and the second bonding part 122 may be spaced apart from eachother on the lower surface of the light emitting device 120.

The first bonding part 121 may be disposed on the first frame 111. Thesecond bonding part 122 may be disposed on the second frame 112.

The first bonding part 121 may be disposed between the light emittingstructure 123 and the first frame 111. The second bonding part 122 maybe disposed between the light emitting structure 123 and the secondframe 112.

Meanwhile, the light emitting device package according to an embodimentmay comprise the first opening TH1 and the second opening TH2 asillustrated in FIG. 10 . The first frame 111 may comprise the firstopening TH1. The second frame 112 may comprise the second opening TH2.

For example, the first package body 113 may have a flat lower surfaceand may comprise an upper surface parallel to the lower surface. Thefirst and second openings TH1 and TH2 may pass through the top and lowersurfaces of the first package body 113.

The first opening TH1 may be provided in the first frame 111. The firstopening TH1 may be provided to pass through the first frame 111. Thefirst opening TH1 may be provided to pass through the upper and lowersurfaces of the first frame 111 in the first direction.

The first opening TH1 may be disposed under the first bonding part 121of the light emitting device 120. The first opening TH1 may be providedto overlap the first bonding part 121 of the light emitting device 120.The first opening TH1 may be provided to overlap the first bonding part121 of the light emitting device 120 in the first direction from theupper surface to the lower surface of the first frame 111.

The second opening TH2 may be provided in the second frame 112. Thesecond opening TH2 may be provided to pass through the second frame 112.The second opening TH2 may be provided to pass through the top and lowersurfaces of the second frame 112 in the first direction.

The second opening TH2 may be disposed under the second bonding part 122of the light emitting device 120. The second opening TH2 may be providedto overlap the second bonding part 122 of the light emitting device 120.The second opening TH2 may be provided to overlap the second bondingpart 122 of the light emitting device 120 in the first direction fromthe upper surface to the lower surface of the second frame 112.

The first opening TH1 and the second opening TH2 may be spaced apartfrom each other. The first opening TH1 and the second opening TH2 may bespaced apart from each other below the lower surface of the lightemitting device 120.

According to an embodiment, a width of an upper region of the firstopening TH1 may be greater than a width of the first bonding part 121.Also, a width of an upper region of the second opening TH2 may begreater than a width of the second bonding part 122.

The light emitting device package according to an embodiment maycomprise a first conductor 221 and a second conductor 222, asillustrated in FIG. 10 . Also, the light emitting device packageaccording to an embodiment may comprise a first conductive layer 321 anda second conductive layer 322. The first conductive layer 321 may bespaced apart from the second conductive layer 322.

The first conductor 221 may be disposed under the first bonding part121. The first conductor 221 may be electrically connected to the firstbonding part 121. The first conductor 221 may be disposed to overlap thefirst bonding part 121 in the first direction.

The first conductor 221 may be provided in the first opening TH1. Thefirst conductor 221 may be disposed between the first bonding part 121and the first conductive layer 321. The first conductor 221 may beelectrically connected to the first bonding part 121 and the firstconductive layer 321.

The lower surface of the first conductor 221 may be disposed lower thanthe upper surface of the first opening TH1. The lower surface of thefirst conductor 221 may be lower than the upper surface of the firstconductive layer 321.

The first conductor 221 may be disposed on the first opening TH1. Also,the first conductor 221 may extend from the first bonding part 121 tothe inside of the first opening TH1.

Also, the second conductor 222 may be disposed under the second bondingpart 122. The second conductor 222 may be electrically connected to thesecond bonding part 122. The second conductor 222 may be disposed tooverlap the second bonding part 122 in the first direction.

The second conductor 222 may be provided in the second opening TH2. Thesecond conductor 222 may be disposed between the second bonding part 122and the second conductive layer 322. The second conductor 222 may beelectrically connected to the second bonding part 122 and the secondconductive layer 322.

The lower surface of the second conductor 222 may be disposed lower thanthe upper surface of the second opening TH2. The lower surface of thesecond conductor 222 may be lower than the upper surface of the secondconductive layer 322.

The second conductor 222 may be disposed on the second opening TH2.Also, the second conductor 222 may extend from the second bonding part122 to the inside of the second opening TH2.

In an embodiment, the first conductive layer 321 may be disposed on eachof the bottom and side surfaces of the first conductor 221. The firstconductive layer 321 may be disposed to directly contact the lowersurface and side surfaces of the first conductor 221.

The first conductive layer 321 may be provided in the first opening TH1.The first conductive layer 321 may be disposed under the first bondingpart 121. A width of the first conductive layer 321 may be greater thanthe width of the first bonding part 121.

As described above, according to the light emitting device package,electrical coupling between the first conductive layer 321 and the firstbonding part 121 may be more stably provided by the first conductor 221.

Also, according to an embodiment, the second conductive layer 322 may bedisposed on the lower and side surfaces of the second conductor 222. Thesecond conductive layer 322 may be disposed to directly contact thelower surface and side surfaces of the second conductor 222.

The second conductive layer 322 may be provided in the second openingTH2. The second conductive layer 322 may be disposed under the secondbonding part 122. The width of the second conductive layer 322 may beprovided to be greater than the width of the second bonding part 122.

As described above, according to the light emitting device package 200,the electrical coupling between the second conductive layer 322 and thesecond bonding part 122 may be more stably provided by the secondconductor 222.

For example, the first and second conductors 221 and 222 may be stablybonded to the first and second bonding parts 121 and 122 throughseparate bonding materials, respectively. Also, the side and lowersurfaces of the first and second conductors 221 and 222 may contact thefirst and second conductive layers 321 and 322, respectively.Accordingly, when compared to the case in which the first and secondconductive layers 321 and 321 directly contact the lower surfaces of thefirst and second bonding parts 121 and 122, respectively, each ofcontact areas when the first and second conductive layers 321 and 322contact the first and second conductors 221 and 222, respectively, maybe larger. Accordingly, the power may be stably supplied from the firstand second conductive layers 321 and 322 to the first and second bondingparts 121 and 122 through the first and second conductors 221 and 222,respectively.

The first conductive layer 321 and the second conductive layer 322 maycomprise at least one material selected from the group including Ag, Au,Pt, Sn, and Cu, or an alloy thereof. However, the present invention isnot limited thereto, and a material capable of securing a conductivefunction may be used as each of the first conductive layer 321 and thesecond conductive layer 322.

For example, each of the first conductive layer 321 and the secondconductive layer 322 may be formed using a conductive paste. Theconductive paste may comprise a solder paste, a silver paste, and thelike and may be provided as a multilayer that is formed of differentmaterials or a multilayer or single layer made of an alloy. For example,each of the first conductive layer 321 and the second conductive layer322 may comprise a Sn—Ag—Cu (SAC) material.

The light emitting device package according to an embodiment maycomprise the first resin 130.

The first resin 130 may be disposed between the first package body 113and the light emitting device 120. The first resin 130 may be disposedbetween the upper surface of the first package body 113 and the lowersurface of the light emitting device 120.

Also, the light emitting device package according to the embodiment maycomprise a recess R, as illustrated in FIG. 10 . The recess R may beprovided to be recessed from the lower surface of the cavity C to thelower surface of the package body 110.

The recess R may be provided in the first package body 113. The recess Rmay be provided to be recessed from the upper surface to the lowersurface of the first package body 113. The recess R may be disposedunder the light emitting device 120.

The recess R may be provided between the first opening TH1 and thesecond package body 117. Also, the recess R may be provided between thesecond opening TH2 and the second package body 117. For example, therecess R may be provided in a closed loop shape under the light emittingdevice 120.

When viewed from an upper side of the light emitting device 120, therecess R be disposed between the first bonding part 121 and the secondpackage body 117 disposed adjacent to the first opening TH1. Also, whenviewed from the upper side of the light emitting device 120, the recessR may be disposed between the second bonding part 122 and the secondpackage body 117 disposed adjacent to the second opening TH2.

The recess R may be provided in a closed loop shape around the first andsecond openings TH1 and TH2.

When viewed from the upper side of the light emitting device 120, a sizeof the light emitting device 120 may be greater than a closed loop areaprovided by the recess R.

When viewed from the upper side of the light emitting device 120, aclosed loop defined by the recess R may be provided in an outlineconnecting four side surfaces of the light emitting device 120 to eachother.

The first resin 130 may be disposed in the recess R. The first resin 130may be disposed between the light emitting device 120 and the firstpackage body 113. The first resin 130 may be disposed between the firstbonding part 121 and the second package body 117. The first resin 130may be disposed between the second bonding part 122 and the secondpackage body 117. For example, the first resin 130 may be disposed tocontact a side surface of the first bonding part 121 and a side surfaceof the second bonding part 122.

The first resin 130 may provide stable fixing force between the lightemitting device 120 and the first package body 113. For example, thefirst resin 130 may be disposed to directly contact the upper surface ofthe first package body 113. Also, the first resin 130 may be disposed todirectly contact the lower surface of the light emitting device 120.

For example, the first resin 130 may comprise at least one of anepoxy-based material, a silicone-based material, or a hybrid materialincluding the epoxy-based material and the silicone-based material.Also, the first resin 130 may reflect light emitted from the lightemitting device 120. When the first resin 130 has a reflective function,the first resin 130 may comprise white silicone. When the first resin130 has the reflection function, the first resin 130 may be formed of amaterial including, for example, TiO₂ and the like. The first resin 130may be referred to as an adhesive.

The first and second bonding parts 121 and 122 of the light emittingdevice 120 may be sealed from the outside by the first resin 130provided in the recess R. The first resin 130 may be provided in aclosed loop shape under the light emitting device 120. The first resin130 may be provided in a closed loop shape along the shape of the recessR. The recess R may be provided as a closed loop having a rectangularshape or may be provided as a closed loop having a circular or ellipticshape.

Also, the light emitting device package according to an embodiment maycomprise a second resin 140, as illustrated in FIG. 10 .

The second resin 140 may be provided on the light emitting device 120.The second resin 140 may be disposed on the first package body 113. Thesecond resin 140 may be disposed in the cavity C provided by the secondpackage body 117.

The second resin 140 may comprise an insulation material. Also, thesecond resin 140 may comprise a wavelength conversion means thatreceives light emitted from the light emitting device 120 to providelight of which a wavelength is converted. For example, the second resin140 may comprise a phosphor, a quantum dot, and the like.

In addition, the light emitting device package according to anembodiment may comprise a first lower recess R11 and a second lowerrecess R12, as illustrated in FIG. 10 . The first lower recess R11 andthe second lower recess R12 may be spaced apart from each other.

The first lower recess R11 may be provided in a lower surface of thefirst frame 111. The first lower recess R11 may be recessed upward fromthe lower surface of the first frame 111. The first lower recess R11 maybe spaced apart from the first opening TH1.

The first lower recess R11 may be provided to a width of severalmicrometers to several tens of micrometers. A resin part may be providedin the first lower recess R11. For example, the resin part filled in thefirst lower recess R11 may be formed of the same material as the firstpackage body 113.

However, the present invention is not limited thereto, and the resinpart may be selected from materials having poor adhesion and wettabilitywith respect to the first and second conductive layers 321 and 322.Alternatively, the resin part may be selected from a material having alow surface tension with respect to the first and second conductivelayers 321 and 322.

For example, the resin part filled in the first lower recess R11 may beprovided while the first frame 111, the second frame 112, and the firstbody 115 are formed through an injection process.

The resin part filled in the first lower recess R11 may be disposedaround an area of a lower surface of the first frame 111 providing thefirst opening TH1. The area of the lower surface of the first frame 111providing the first opening TH1 may be disposed separately from a lowersurface in the vicinity of the first frame 111 in a kind of islandshape.

Therefore, when the resin part is formed of the material having the pooradhesion or wettability with respect to the first and second conductivelayers 321 and 322 or the material having the low surface tensionbetween the resin part and the first and second conductive layers 321and 322, the first conductive layer 321 provided in the first openingTH1 may be prevented from being spread over the resin part filled in thefirst lower recess R11 or the first body 115 by moving away from thefirst opening TH1.

This is because of using the feature in which the adhesion relationshipbetween the first conductive layer 321, the resin part, and the firstbody 115 or between the resin part and the first and second conductivelayers 321 and 322 is poor. That is, the material forming the firstconductive layer 321 may be selected to have good adhesive propertieswith respect to the first frame 111. Also, the material forming thefirst conductive layer 321 may be selected to have poor adhesiveproperties with respect to the resin part and the first body 115.

Accordingly, the first conductive layer 321 may be prevented from beingspread to flow over the region provided by the resin part or the firstbody 115 by overflowing from the first opening TH1 to the regionprovided by the outside of the first resin part or the first body 115,and thus, the first conductive layer 321 may be stably disposed on theregion in which the first opening TH1 is provided. Therefore, when thefirst conductive layer 321 disposed in the first opening TH1 overflows,the first conductive layer 321 may be prevented from being expanded outof the region of the first lower recess R11, in which the resin part orthe first body 115 is provided. Also, the first conductive layer 321 maybe stably connected to the lower surface of the first bonding part 121in the first opening TH1.

Therefore, when the light emitting device package is mounted on thecircuit board, a problem in which the first conductive layer 321 and thesecond conductive layer 322 contact each other to cause electrical shortcircuit may be prevented, and in a process of locating the first andsecond conductive layers 321 and 322, an amount of each of the first andsecond conductive layers 321 and 322 may be easily controlled.

Also, the second lower recess R12 may be provided in a lower surface ofthe second frame 112. The second lower recess R12 may be recessed upwardfrom the lower surface of the second frame 112. The second lower recessR12 may be spaced apart from the second opening TH2.

The second lower recess R12 may be provided to a width of severalmicrometers to several tens of micrometers. The resin part may beprovided in the second lower recess R12. The resin part filled in thesecond lower recess R12 may be, for example, formed of the same materialas the first body 115.

However, the present invention is not limited thereto, and the resinpart may be selected from materials having poor adhesion and wettabilitywith respect to the first and second conductive layers 321 and 322.Alternatively, the resin part may be selected from a material having alow surface tension with respect to the first and second conductivelayers 321 and 322.

For example, the resin part filled in the second lower recess R12 may beprovided while the first frame 111, the second frame 112, and the firstbody 115 are formed through an injection process.

The resin part filled in the second lower recess R12 may be disposedaround an area of a lower surface of the second frame 112 providing thesecond opening TH2. The area of the lower surface of the second frame112 providing the second opening TH2 may be disposed separately from alower surface in the vicinity of the second frame 112 in a kind ofisland shape.

Therefore, when the resin part is formed of the material having the pooradhesion or wettability with respect to the first and second conductivelayers 321 and 322 or the material having the low surface tensionbetween the resin part and the first and second conductive layers 321and 322, the second conductive layer 322 provided in the second openingTH2 may be prevented from being spread over the resin part filled in thesecond lower recess R12 or the first body 115 by moving away from thesecond opening TH2.

This is because of using the feature in which the adhesion relationshipbetween the second conductive layer 322, the resin part, and the firstbody 115 or between the resin part and the first and second conductivelayers 321 and 322 is poor. That is, the material forming the secondconductive layer 322 may be selected to have good adhesive propertieswith respect to the second frame 112. Also, the material forming thesecond conductive layer 322 may be selected to have poor adhesiveproperties with respect to the resin part and the first body 115.

Accordingly, the second conductive layer 322 may be prevented from beingspread to flow over the region provided by the resin part or the firstbody 115 by overflowing from the second opening TH2 to the regionprovided by the outside of the first resin part or the first body 115,and thus, the second conductive layer 322 may be stably disposed on theregion in which the second opening TH2 is provided. Therefore, when thesecond conductive layer 322 disposed in the second opening TH2overflows, the second conductive layer 322 may be prevented from beingexpanded out of the region of the second lower recess R12, in which theresin part or the first body 115 is provided. Also, the secondconductive layer 322 may be stably connected to the lower surface of thesecond bonding part 122 in the second opening TH2.

Therefore, when the light emitting device package is mounted on thecircuit board, a problem in which the first conductive layer 321 and thesecond conductive layer 322 contact each other to cause electrical shortcircuit may be prevented, and in a process of locating the first andsecond conductive layers 321 and 322, an amount of each of the first andsecond conductive layers 321 and 322 may be easily controlled.

In the light emitting device package illustrated in FIG. 10 , in theprocess of forming the first and second openings TH1 and TH2, a case inwhich etching is performed in each of directions of upper and lowersurfaces of the first and second lead frames 111 and 112 will bedescribed.

As the etching is performed in each of the directions of the upper andlower surfaces of the first and second lead frames 111 and 112,respectively, each of the first and second openings TH1 and TH2 may havea spherical shape having different widths between upper and lowerportions, respectively.

Each of the first and second openings TH1 and TH2 may have a first pointbetween an upper portion and a lower portion thereof and may graduallyincrease in width from the lower region toward the first point and thendecrease in width again. Also, the width may gradually increase from anintermediate region in which the width decrease toward the upper regionand then decrease again.

The above described first point of each of the first and second openingsTH1 and TH2 may refer to a boundary area at which a size of the openingdecreases from the lower region to the upper region and then increasesagain. Also, the first point may be a point having the smallest width inthe first direction between the upper and lower surfaces of each of thefirst and second openings TH1 and TH2.

Each of the first and second openings TH1 and TH2 may comprise a firstarea disposed on an upper surface of each of the first and second frames111 and 112 and a second area disposed on a lower surface of each of thefirst and second frames 111 and 112 on the basis of the first point. Awidth of the upper surface of the first area may be provided to be lessthan that of the lower surface of the second area.

Since each of the first and second openings TH1 and TH2 may comprise thefirst area including a first point between the upper surface and thelower surface and having a curvature between the upper surface of thefirst point and the second area having a curvature between the firstpoint and the lower surface, adhesion force between first and secondconductors 221, which will be described later, and 222 and the first andsecond conductors 321 may be improved. Also, the process problem inwhich the first and second frames are damaged during the process offorming the first and second openings TH1 and TH2 may be improved.

According to an embodiment, after the etching process for forming thefirst and second openings TH1 and TH2 is completed, a plating processmay be performed on the first and second frames 111 and 112.Accordingly, first and second plating layers 111 a and 112 a may beformed on surfaces of the first and second frames 111 and 112.

The first and second plating layers 111 a and 112 a may be provided onupper and lower surfaces of the first and second frames 111 and 112.Also, the first and second plating layers 111 a and 112 a may beprovided on boundary areas that contact the first and second openingsTH1 and TH2, respectively.

For example, the first and second frames 111 and 112 may be provided asCu layers as basic support members. Also, each of the first and secondplating layers 111 a and 112 a may comprise at least one of a Ni layerand a Ag layer.

When each of the first and second plating layers 111 a and 112 aincludes the Ni layer, since the Ni layer has a small change in thermalexpansion, even when the size or arrangement position of the packagebody is changed by the thermal expansion, the position of the lightemitting device disposed on the upper portion thereof by the Ni layermay be stably fixed. When each of the first and second plating layers111 a and 112 a include the Ag layer, the Ag layer may efficientlyreflect light emitted from the upper light emitting device to improveluminous intensity.

The first and second metal layers 111 a and 112 a provided in theboundary areas contacting the first and second openings TH1 and TH2 maybe bonded to the first and second conductive layers 321 and 322 providedin the first and second openings TH1 and TH2 to form first and secondalloy layers, respectively.

According to an embodiments, in the process of forming the first andsecond conductive layers 321 and 322, or the thermal treatment processafter providing the first and second conductive layers 321 and 322,intermetallic compounds may be formed between the first and secondconductive layers 321 and 322, and the first and second frames 111 and112, respectively.

For example, materials forming the first and second conductive layers321 and 322 and the first and second metal layers 111 a and 112 a of thefirst and second frames 111 and 112 may be bonded to each other to formthe first and second alloy layer, respectively.

Thus, the first conductive layer 321 and the first frame 111 may bephysically or electrically bonded stably to each other. The firstconductive layer 321, the first alloy layer, and the first frame 111 maybe physically or electrically bonded stably to each other.

Also, the second conductive layer 322 and the second frame 112 may bephysically or electrically bonded stably to each other. The secondconductive layer 322, the second alloy layer, and the second frame 112may be physically or electrically bonded stably to each other.

For example, each of the first and second alloy layers may comprise atleast one intermetallic compound layer formed of a material selectedfrom the group including AgSn, CuSn, AuSn, and the like. Theintermetallic compound layer may be formed through coupling between afirst material and a second material. The first material may be providedfrom the first and second conductive layers 321 and 322, and the secondmaterial may be provided from the first and second metal layers 111 aand 112 a or the support members of the first and second frames 111 and112.

According to an embodiment, the intermetallic compound layer may beprovided to a thickness of several micrometers. For example, theintermetallic compound layer may be provided to a thickness of 1micrometer to 3 micrometers.

When each of the first and second conductive layers 321 and 322 includesthe Sn material, and each of the first and second metal layers 111 a and112 a includes the Ag material, in the process of forming the first andsecond conductive layers 321 and 322, or the thermal treatment processafter providing the first and second conductive layers 321 and 322, theSn material and the Ag material may be bonded to each other to form AgSnintermetallic compound layers.

Also, when each of the first and second conductive layers 321 and 322includes the Sn material, and each of the first and second metal layers111 a and 112 a includes the Au material, in the process of forming thefirst and second conductive layers 321 and 322, or the thermal treatmentprocess after providing the first and second conductive layers 321 and322, the Sn material and the Au material may be bonded to each other toform AuSn intermetallic compound layers.

Also, when each of the first and second conductive layers 321 and 322includes the Sn material, and each of the first and second frames 111and 112 includes the Cu material, in the process of forming the firstand second conductive layers 321 and 322, or the thermal treatmentprocess after providing the first and second conductive layers 321 and322, the Sn material and the Cu material may be bonded to each other toform CuSn intermetallic compound layers.

Also, when each of the first and second conductive layers 321 and 322includes the Ag material, and each of the first and second metal layers111 a and 112 a or the support members of the first and second frames111 and 112 includes the Sn material, in the process of forming thefirst and second conductive layers 321 and 322, or the thermal treatmentprocess after providing the first and second conductive layers 321 and322, the Ag material and the Sn material may be bonded to each other toform AgSn intermetallic compound layers.

The intermetallic compound layer described above may have a highermelting point than the general bonding material. Also, the heattreatment process in which the intermetallic compound layer is formedmay be performed at a lower temperature than the melting point of thegeneral bonding material.

Accordingly, the light emitting device package 100 according to anembodiment does not cause the re-melting phenomenon between the lightemitting device 120 and the light emitting device package even whenbonded to the substrate through the reflow process, and thus, theelectrical connection and the physical bonding force may not bedegraded.

Also, according to the light emitting device package and the method ofmanufacturing the light emitting device package according to theembodiment, the package body 110 does not need to be exposed to a hightemperature in the process of manufacturing the light emitting devicepackage. Therefore, according to an embodiment, the package body 110 maybe prevented from being damaged or discolored due to the exposure at thehigh temperature.

Accordingly, the selection range for the material forming the first body115 may be widened. According to an embodiment, the first body 115 maybe provided using a relatively inexpensive resin material as well as anexpensive material such as a ceramic.

For example, the first body 115 may comprise at least one materialselected from the group including a polyphthalamide (PPA) resin, apolycyclohexylenedimethylene terephthalate (PCT) resin, an epoxy moldingcompound (EMC) resin, a silicone molding compound (SMC) resin, and apolyimide (PI) resin.

In an embodiment, the intermetallic compound layer may be formed betweenthe first and second conductors 221 and 222 and the first and secondconductive layers 321 and 322.

Similarly, as described above, according to an embodiments, in theprocess of forming the first and second conductive layers 321 and 322,or the thermal treatment process after providing the first and secondconductive layers 321 and 322, intermetallic compounds may be formedbetween the first and second conductive layers 321 and 322 and the firstand second conductors 221 and 222, respectively.

For example, an alloy layer may be formed by coupling the materialsforming the first and second conductive layers 321 and 322 to the firstand second conductors 221 and 222.

Accordingly, the first conductive layer 321 and the first conductor 221may be more physically or electrically bonded more stably to each other.The first conductive layer 321, the alloy layer, and the first conductor221 may be physically or electrically bonded stably to each other.

Also, the second conductive layer 322 and the second conductor 222 maybe more physically or electrically bonded more stably to each other. Thesecond conductive layer 322, the alloy layer, and the second conductor222 may be physically or electrically bonded stably to each other.

For example, the alloy layer may comprise at least one intermetalliccompound layer selected from the group including AgSn, CuSn, AuSn, andthe like. The intermetallic compound layer may be formed throughcoupling between a first material and a second material. The firstmaterial may be provided from the first and second conductive layers 321and 322, and the second material may be provided from the first andsecond conductors 221 and 222.

According to an embodiment, the intermetallic compound layer may beprovided to a thickness of several micrometers. For example, theintermetallic compound layer may be provided to a thickness of 1micrometer to 3 micrometers.

In the light emitting device package according to an embodiment, wheneach of the first and second bonding parts 121 and 122 of the lightemitting device 120 has a small size to improve the light extractionefficiency, a width of the upper region of the first opening TH1 may begreater than or equal to the width of the first bonding part 121. Also,a width of an upper region of the second opening TH2 may be greater thanor equal to a width of the second bonding part 122.

Also, the width of the upper region of the first opening TH1 may be lessthan or equal to a width of a lower region of the first opening TH1.Also, the width of the upper region of the second opening TH2 may beless than or equal to a width of a lower region of the second openingTH2.

For example, the width of the upper region of the first opening TH1 maybe provided to several tens of micrometers to several hundredmicrometers. Also, the width of the lower region of the first openingTH1 may be provided to be greater several tens of micrometers to severalhundred micrometers than the width of the upper region of the firstopening TH1.

Also, the width of the upper region of the second opening TH2 may beprovided to several tens of micrometers to several hundred micrometers.Also, the width of the lower region of the second opening TH2 may beprovided to be greater several tens of micrometers to several hundredmicrometers than the width of the upper region of the second openingTH2.

Also, the width of the lower region of the first opening TH1 may begreater than the width of the upper region of the first opening TH1. Thefirst opening TH1 may be provided to a constant width by a predetermineddepth in the upper region and may be provided in an inclined shapetoward the lower region.

Also, the width of the lower region of the second opening TH2 may begreater than the width of the upper region of the second opening TH2.The second opening TH2 may be provided in a constant width by apredetermined depth in the upper region and may be provided in aninclined shape toward the lower region.

For example, the first opening TH1 may be provided in an inclined shapeof which a width gradually decreases from the lower region to the upperregion. Also, the second opening TH2 may be provided in an inclinedshape of which a width gradually decreases from the lower region to theupper region.

However, the present invention is not limited thereto, and an inclinedsurfaces between the upper and lower regions of the first and secondopenings TH1 and TH2 may have a plurality of inclined surfaces havingdifferent inclinations, and each of the inclined surfaces may bedisposed at a curvature.

In the light emitting device package according to an embodiment, asillustrated in FIG. 10 , when the areas of the first and second bondingparts 121 and 122 are small, the first and second bonding parts 121 and122 may be disposed inside the first and second openings TH1 and TH2.

Here, since the areas of the first and second bonding parts 121 and 122are small, it may be difficult to secure adhesion force between thefirst and second conductive layers 321 and 322 and the first and secondbonding parts 121 and 122. Thus, the light emitting device packageaccording to an embodiment may further include a first conductor 221 anda second conductor 222 so as to further secure a contact area betweenthe first and second conductive layers 321 and 322 and the first andsecond bonding parts 121 and 122.

According to an embodiment, the first conductive layer 321 may beelectrically connected to the first bonding part 121, and the secondconductive layer 322 may be electrically connected to the second bondingpart 122. For example, external power may be supplied to the firstconductive layer 321 and the second conductive layer 322, and thus, thelight emitting device 120 may be driven.

According to the light emitting device package according to theembodiment, the first resin 130 provided in the recess R may be providedbetween the lower surface of the light emitting device 120 and the uppersurface of the package body 110. When viewed from the upper side of thelight emitting device 120, the first resin 130 may be provided in aclosed loop shape around the first and second bonding parts 121 and 122.Also, when viewed from the upper side of the light emitting device 120,the first resin 130 may be provided in a closed loop shape around thefirst and second openings TH1 and TH2.

The first resin 130 may perform a function of stably fixing the lightemitting device 120 to the package body 110. Also, the first resin 130may contact the side surfaces of the first and second bonding parts 121and 122 and may be disposed around the first and second bonding parts121 and 122. When viewed from the upper side of the light emittingdevice 120, the first resin 130 may be disposed so that the first andsecond openings TH1 and TH2 are isolated from an outer region in whichthe second resin 140 is provided.

The first resin 130 may prevent the first and second conductive layers321 and 322 provided in the first and second openings TH1 and TH2 frombeing separated from the closed loop of the recess R to flow in theoutward direction of the light emitting device 120.

When viewed from the upper side of the light emitting device 120, if thefirst and second conductive layers 321 and 322 move outward from thelight emitting device 120, the first and second conductive layers 321and 322 may be spread along the side surface of the light emittingdevice 120. As described above, when the first and second conductivelayers 321 and 322 move to the side surfaces of the light emittingdevice 120, the first conductivity type semiconductor layer and thesecond conductivity type semiconductor layer of the light emittingdevice 120 may be electrically short-circuited. Also, when the first andsecond conductive layers 321 and 322 move to the side surface of thelight emitting device 120, light extraction efficiency of the lightemitting device 120 may be deteriorated.

However, according to an embodiment, since the inside and the outsideare isolated based on the region provided with the recess R by the firstresin 130, the first and second conductive layers 321 and 322 may beprevented from moving outward from the area provided with the recess R.

Therefore, according to the light emitting device package according toan embodiment, the first and second conductive layers 321 and 322 may beprevented from moving to the side surface of the light emitting device120 and also may be prevented from being electrically short-circuited toimprove the light extraction efficiency.

Also, according to an embodiment, the first resin 130 provided in therecess R may be provided to move a first area A1 disposed under thelight emitting device 120 along the lower surface of the light emittingdevice 120 and may be disposed to contact four side surfaces of thefirst and second bonding parts 121 and 122. Thus, the first and secondbonding parts 121 and 122 may be disposed to be surrounded by the firstresin 130, and the first and second openings TH1 and TH2 may be sealedby the first resin 130.

As described above, since the first and second openings TH1 and TH2 aresealed by the first resin 130, the first and second conductive layers321 and 322 provided in the first and second openings TH1 and TH2 may beprevented to moving upward from the upper surface of the first packagebody 113.

Also, according to an embodiment, the sum of the areas of the first andsecond bonding parts 121 and 122 may be provided to 10% or less based onthe area of the upper surface of the substrate 124. According to thelight emitting device package according to an embodiment, in order tosecure the light emitting area through which light is emitted from thelight emitting device to improve the light extraction efficiency, thesum of the areas of the first and second bonding parts 121 and 122 maybe set to 10% or less based on the area of the upper surface of thesubstrate 124.

Also, according to an embodiment, the sum of the areas of the first andsecond bonding parts 121 and 122 may be provided to 0.7% or more withreference to the area of the upper surface of the substrate 124.According to the light emitting device package according to anembodiment, in order to provide stable bonding force to the mountedlight emitting device, the sum of the areas of the first and secondbonding parts 121 and 122 may be set to 0.7% or more with reference tothe area of the upper surface of the substrate 124.

Also, according to the light emitting device package according to anembodiment, in order to stably locate the first conductor 221 and thesecond conductor 222, the sum of the areas of the first and secondbonding parts 121 and 122 may be set to 0.7% or more with reference tothe area of the upper surface of the substrate 124.

As described above, as the areas of the first and second bonding parts121 and 122 are small, an amount of light transmitted to the lowersurface of the light emitting device 120 may increase. Also, the firstresin 130 having good reflective characteristics may be provided underthe light emitting device 120. Therefore, light emitted in the downwarddirection of the light emitting device 120 may be reflected by the firstresin 130 and be effectively emitted in the upward direction of thelight emitting device package to improve the light extractionefficiency.

The light emitting device package according to an embodiment describedabove may be provided to be mounted on a submount or a circuit board.

However, when the light emitting device package of the related art ismounted on the submount or the circuit board, a high temperature processsuch as a reflow process may be applied. Here, in the reflow process, are-melting phenomenon occurs in a bonding area between the lead frameand the light emitting device provided in the light emitting devicepackage to deteriorate the stability of the electrical connection andthe physical coupling.

However, according to the light emitting device package and the methodof manufacturing the light emitting device package according to anembodiment, the bonding part of the light emitting device according toan embodiment may receive driving power through the conductive layerdisposed in the opening. Also, a melting point of the conductive layerdisposed in the opening may be selected to have a higher value than thatof the general bonding material.

Accordingly, the light emitting device package according to anembodiment does not cause the re-melting phenomenon even when bonded toa main substrate through the reflow process, and thus, the electricalconnection and the physical bonding force may not be degraded.

Also, according to the light emitting device package and the method ofmanufacturing the light emitting device package according to theembodiment, the package body 110 does not need to be exposed to a hightemperature in the process of manufacturing the light emitting devicepackage. Therefore, according to an embodiment, the package body 110 maybe prevented from being damaged or discolored due to the exposure at thehigh temperature.

Accordingly, the selection range for the material forming the first body115 may be widened. According to an embodiment, the first body 115 maybe provided using a relatively inexpensive resin material as well as anexpensive material such as a ceramic.

For example, the first body 115 may comprise at least one materialselected from the group including a polyphthalamide (PPA) resin, apolycyclohexylenedimethylene terephthalate (PCT) resin, an epoxy moldingcompound (EMC) resin, a silicone molding compound (SMC) resin, and apolyimide (PI) resin.

Next, an example of the light emitting device applied to the lightemitting device package according to an embodiment of the presentinvention will be described with reference to FIGS. 11 and 12 . FIG. 11is a plan view explaining an example of the light emitting device thatis applied to the light emitting device package according to anembodiment of the present invention, and FIG. 12 is a cross-sectionalview taken along line G-G of a light emitting device illustrated in FIG.11 .

In the description of the light emitting device according to anembodiment with reference to FIGS. 11 and 12 , descriptions overlappingwith those described with reference to FIGS. 1 to 10 may be omitted.

For clarity, although first and second electrodes are disposed under afirst bonding part 2171 and a second bonding part 2172 in FIG. 1 , afirst electrode 2141 electrically connected to the first bonding part2171 and a second electrode 2142 electrically connected to the secondbonding part 2172 may be shown.

As illustrated in FIGS. 11 and 12 , a light emitting device 2100 maycomprise a first light emitting structure 2110 and a second lightemitting structure 2120, which are disposed on a substrate 2105.

The substrate 2105 may be formed of a material selected from the groupincluding sapphire substrate (Al₂O₃), SiC, GaAs, GaN, ZnO, Si, GaP, InP,and Ge. For example, the substrate 2105 may be provided as a patternedsapphire substrate (PSS) having an uneven pattern formed on an uppersurface thereof.

The first light emitting structure 2110 may comprise a firstconductivity type first semiconductor layer 2111, a first active layer2112, and a second conductivity type second semiconductor layer 2113.The first active layer 2112 may be disposed between the firstsemiconductor layer 2111 and the second semiconductor layer 2113. Forexample, the first active layer 2112 may be disposed on the firstsemiconductor layer 2111, and the second semiconductor layer 2113 may bedisposed on the first active layer 2112.

In addition, the second light emitting structure 2120 may comprise afirst conductivity type third semiconductor layer 2121, a second activelayer 2122, and a second conductivity type fourth semiconductor layer2123. The second active layer 2122 may be disposed between the thirdsemiconductor layer 2121 and the fourth semiconductor layer 2123. Forexample, the second active layer 2122 may be disposed on the thirdsemiconductor layer 2121, and the fourth semiconductor layer 2123 may bedisposed on the second active layer 2122.

According to an embodiment, each of the first semiconductor layer 2111and the third semiconductor layer 2121 may be provided as an n-typesemiconductor layer, and each of the second semiconductor layer 2113 andthe fourth semiconductor layer 2123 may be a p-type semiconductor layer.Of course, according to another embodiment, each of the firstsemiconductor layer 2111 and the third semiconductor layer 2121 may beprovided as a p-type semiconductor layer, and each of the secondsemiconductor layer 2113 and the fourth semiconductor layer 2123 may beprovided as an n-type semiconductor layer.

Hereinafter, for convenience of description, the structure in which eachof the first semiconductor layer 2111 and the third semiconductor layer2121 is provided as the n-type semiconductor layer, and each of thesecond semiconductor layer 2113 and the fourth semiconductor layer 2123is provided as the p-type semiconductor layer will be described as areference.

Also, in the above description, the first semiconductor layer 2111 andthe third semiconductor layer 2121 are disposed on the substrate 2105 tocontact each other. However, a buffer layer may be further disposedbetween the first semiconductor layer 2111 and the substrate 2105 and/orbetween the third semiconductor layer 2121 and the substrate 2105. Forexample, the buffer layer may provide a function of reducing a latticeconstant difference between the substrate 2105 and the first and secondlight emitting structures 2110 and 2120 to improve crystallinity.

Each of the first and second light emitting structures 2110 and 2120 maybe provided as a compound semiconductor. The first and second lightemitting structures 2110 and 2120 may be provided as, for example, GroupII-V or III-V compound semiconductors. For example, each of the firstand second light emitting structures 2110 and 2120 may be formed of atleast two or more elements selected from aluminum (Al), gallium (Ga),indium (In), phosphorus (P), arsenic (As), and nitrogen (N).

The first and third semiconductor layers 2111 and 2121 may be providedas, for example, Group II-VI compound semiconductors or Group III-Vcompound semiconductors. For example, each of the first and thirdsemiconductor layers 2111 and 2121 may be a semiconductor materialhaving a composition formula of In_(x)Al_(y)Ga_(1-x-y)N (0≤x≤1, 0≤y≤1,0≤x+y≤1) or a semiconductor material having a composition formula of(Al_(x)Ga_(1-x))_(y)In_(1-y)P (0≤x≤1, 0≤y≤1). For example, each of thefirst and third semiconductor layers 2111 and 2121 may be formed of amaterial selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN,AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, GaInP, and the like and may bedoped with an n-type dopant selected from the group including Si, Ge,Sn, Se, Te, and the like.

The first and second active layers 2112 and 2122 may be provided as, forexample, Group II-VI compound semiconductors or Group III-V compoundsemiconductors. For example, each of the first and third active layers2112 and 2122 may be a semiconductor material having a compositionformula of In_(x)Al_(y)Ga_(1-x-y)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) or asemiconductor material having a composition formula of(Al_(x)Ga_(1-x))_(y)In_(1-y)P (0≤x≤1, 0≤y≤1). For example, each of thefirst and second active layers 2112 and 2122 may be formed of a materialselected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN,AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, GaInP, and the like.For example, each of the first and second active layers 2112 and 2122may be provided in a multi-well structure and may comprise a pluralityof barrier layers and a plurality of well layers.

The second and fourth semiconductor layers 2113 and 2123 may be providedas, for example, Group II-VI compound semiconductors or Group III-Vcompound semiconductors. For example, each of the second and fourthsemiconductor layers 2113 and 2123 may be a semiconductor materialhaving a composition formula of In_(x)Al_(y)Ga_(1-x-y)N (0≤x≤1, 0≤y≤1,0≤x+y≤1) or a semiconductor material having a composition formula of(Al_(x)Ga_(1-x))_(y)In_(1-y)P (0≤x≤1, 0≤y≤1). For example, each of thesecond and fourth semiconductor layers 2113 and 2123 may be formed of amaterial selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN,AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, GaInP, and the like and may bedoped with a p-type dopant selected from the group including Mg, Zn, Ca,Sr, Ba, and the like.

The light emitting device 2100 according to an embodiment may comprise alight transmissive electrode layer 2230, as illustrated in FIG. 12 . Thelight transmissive electrode layer 2230 may improve current injectionefficiency between the second and fourth semiconductor layers 2113 and2123 and the light transmissive electrode layer 2230, thus the lightoutput of the light emitting device 2100 can be increased. Also, thelight transmissive electrode layer 2230 may transmit light emitted fromthe active layer 2122. The above-described effect will be describedlater, and the position and shape of the light transmissive electrodelayer 2230 will be further described with reference to the method ofmanufacturing the light emitting device according to an embodiment.

For example, the light transmissive electrode layer 2230 may comprise atleast one selected from the group including metal, metal oxide, andmetal nitride.

The light transmissive electrode layer 2230 may be formed of, forexample, at least one selected from the group including indium tin oxide(ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tinoxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zincoxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide(AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO_(x),RuO_(x), RuO_(x)/ITO, Ni/IrO_(x)/Au, Ni/IrO_(x)/Au/ITO, Pt, Ni, Au, Rh,and Pd.

The light emitting device 2100 according to an embodiment may comprise areflective layer 2160, as illustrated in FIGS. 11 and 12 . Thereflective layer 2160 may comprise a first reflective layer 2161, asecond reflective layer 2162, and a third reflective layer 2163. Thereflective layer 2160 may be disposed on the light transmissiveelectrode layer 2230.

Since the reflective layer 2160 is disposed on the light transmissiveelectrode layer 2230, light emitted from the active layer 2123 may bereflected by the reflective layer 2160. Thus, light emitted from theactive layer 2123 may be prevented from being absorbed and lost by afirst electrode 2141, a second electrode 2142, and a connectionelectrode 2143, which will be described later, and thus, the lightextraction efficiency of the light emitting device 2100 may be improved.

That is, in this embodiment, the light transmissive electrode layer 2230and the reflective layer 2160 are provided to secure electricalcharacteristics. However, this embodiment is not limited thereto, andaccording to another embodiment, only the reflective layer 2160 may beprovided without arranging the light transmissive electrode layer 2230to secure all the electrical and optical characteristics.

The first reflective layer 2161 may be disposed on the first lightemitting structure 2110. The second reflective layer 2162 may bedisposed on the second light emitting structure 2120. The thirdreflective layer 2163 may be disposed between the first reflective layer2161 and the second reflective layer 2162. The third reflective layer2163 may be disposed on the first light emitting structure 2110 and thesecond light emitting structure 2120.

For example, the third reflecting layer 2163 may be connected to thefirst reflecting layer 2161. Also, the third reflective layer 2163 maybe connected to the second reflective layer 2162. The third reflectivelayer 2163 may be disposed to be in direct physical contact with thefirst reflective layer 2161 and the second reflective layer 2162. Thefirst to third reflective layers 2161, 2162 and 2163 may be formed asone reflective layer connected to each other.

The first reflective layer 2161 may comprise a plurality of openings.The first reflective layer 2161 may comprise a plurality of firstopenings h1 provided to pass through in a first direction, which is adirection perpendicular to the upper surface of the substrate 2105.Also, the first reflective layer 2161 may comprise a plurality of secondopenings h2 provided to pass through in the first direction.

The second reflective layer 2162 may comprise a plurality of openings.The second reflective layer 2162 may comprise a plurality of thirdopenings h3 provided to pass through in the first directionperpendicular to the upper surface of the substrate 2105. Also, thesecond reflective layer 2162 may comprise a plurality of fourth openingsh4 provided to pass through in the first direction.

The third reflective layer 2163 may comprise a plurality of openings.The third reflective layer 2163 may comprise a plurality of fifth-a andfifth-b openings h5 a and h5 b provided to pass through in the firstdirection perpendicular to the upper surface of the substrate 2105.

Also, the third reflective layer 2163 may comprise a plurality ofsixth-a and sixth-b openings h6 a and h6 b provided to pass through inthe first direction. Also, the third reflective layer 2163 may comprisea line opening TH1 provided to pass through in the first direction.

The line opening TH1 may extend in a second direction perpendicular tothe first direction. The line opening TH1 is disposed between the firstlight emitting structure 2110 and the second light emitting structure2120 to connect the first electrode of the first light emittingstructure 2110 to the second electrode of the second light emittingstructure 2120 so that the first and second light emitting structures2110 and 2120 are connected to each other in series.

Here, a structure in which an area of the first electrode is greaterthan that of the second electrode may be advantageous in terms ofcurrent spreading and current injection characteristics in the structureconnected in series. Thus, the line opening TH1 may be connected to thefirst electrode of the first light emitting structure 2110, be disposedat a position adjacent to the second light emitting structure 2120, andbe disposed wider than the area of the fifth-b opening h5 b facing theline opening TH1.

For example, as illustrated in FIG. 12 , the third reflective layer 2163may comprise the line opening TH1 and the fifth-b opening h5 b. The lineopening TH1 may expose an upper surface of the first semiconductor layer2111. The fifth-b opening h5 b may expose an upper surface of the lighttransmissive electrode layer 2230 disposed on the fourth semiconductorlayer 2123.

According to an embodiment, a current spreading layer 2220 may befurther disposed under the fifth-b opening h5 b. The current spreadinglayer 2220 may be disposed between the fourth semiconductor layer 2123and the light transmissive electrode layer 2230.

The arranged positions and shapes of the reflective layer 2160, thelight transmissive electrode layer 2230, and the current spreading layer2220 will be further described with reference to the method ofmanufacturing the light emitting device according to an embodiment.

The reflective layer 2160 may be provided as an insulating reflectivelayer. For example, the reflective layer 2160 may be provided as aDistributed Bragg Reflector (DBR) layer. Also, the reflective layer 2160may be provided as an Omni Directional Reflector (ODR) layer. Also, thereflective layer 2160 may be provided by laminating the DBR layer andthe ODR layer.

As illustrated in FIGS. 11 and 12 , the light emitting device 2100according to an embodiment may comprise a first electrode 2141, a secondelectrode 2142, and a connection electrode 2143.

According to an embodiment, the first electrode 2141 and the secondelectrode 2142 may be spaced apart from each other. The connectionelectrode 2143 may be disposed between the first electrode 2141 and thesecond electrode 2142.

The first electrode 2141 may be disposed on the first reflective layer2161. A partial portion of the first electrode 2141 may be disposed onthe third reflective layer 2163.

The first electrode 2141 may be electrically connected to the secondsemiconductor layer 2113. The first electrode 2141 may be electricallyconnected to the second semiconductor layer 2113 through the pluralityof first openings h1. The first electrode 2141 may be disposed todirectly contact the light transmissive electrode layer 2230 disposedunder the plurality of first openings h1 in a region in which the firstlight emitting structure 2110 is provided. The first electrode 2141 maybe disposed to directly contact an upper surface of the lighttransmissive electrode layer 2230 exposed by the plurality of firstopenings h1 in the region in which the first light emitting structure2110 is provided.

The second electrode 2142 may be disposed on the second reflective layer2162. A partial portion of the second electrode 2142 may be disposed onthe third reflective layer 2163.

The second electrode 2142 may be electrically connected to the thirdsemiconductor layer 2121. The second electrode 2142 may be electricallyconnected to the third semiconductor layer 2121 through the plurality offourth openings h4. The second electrode 2142 may be in direct contactwith the third semiconductor layer 2121 disposed under the plurality offourth openings h4 in a region in which the second light emittingstructure 2120 is provided. The second electrode 2142 may be disposed indirect contact with an upper surface of the third semiconductor layer2121 exposed by the plurality of fourth openings h4 in the region wherethe second light emitting structure 2120 is provided.

The connection electrode 2143 may be disposed on the third reflectivelayer 2163. A partial portion of the connection electrode 2143 may bedisposed on the first reflective layer 2161. A partial portion of theconnection electrode 2143 may be disposed on the second reflective layer2162.

The connection electrode 2143 may be electrically connected to the firstsemiconductor layer 2111 and the fourth semiconductor layer 2123.

The connection electrode 2143 may comprise a first portion 2143 adisposed on the first semiconductor layer 2111, a second portion 2143 bdisposed on the fourth semiconductor layer 2123, and a third portion2143 c connecting the first portion 2143 a to the second portion 2143 a.

The connection electrode 2143 may comprise the first portion 2143 adisposed on the region in which the first light emitting structure 2110is provided. The connection electrode 2143 may comprise a second portion2143 b disposed on the region in which the second light emittingstructure 2120 is provided. The connection electrode 2143 may comprisethe third portion 2143 c disposed on a boundary area between the firstlight emitting structure 2110 and the second light emitting structure2120.

According to an embodiment, the first portion 2143 a may comprise afirst electrode part 2143 aa and a second electrode part 2143 ab.

The first portion 2143 a may be electrically connected to the firstsemiconductor layer 2111 through the plurality of second openings h2,the plurality of sixth-a openings h6 a, and the line opening TH1.

The second electrode part 2143 ab of the first portion 2143 a may beprovided in direct contact with the upper surface of the firstsemiconductor layer 2111 through the plurality of second openings h2 inthe region in which the first light emitting structure 2110 is provided.

The first electrode part 2143 aa of the first portion 2143 a may beprovided in direct contact with the upper surface of the firstsemiconductor layer 2111 through the plurality of sixth-a openings h6 ain the region in which the first light emitting structure 2110 isprovided.

The first electrode part 2143 aa of the first portion 2143 a may beprovided in direct contact with the upper surface of the firstsemiconductor layer 2111 through the line opening TH1 in the region inwhich the first light emitting structure 2110 is provided.

According to an embodiment, the second portion 2143 b may comprise athird electrode part 2143 ba and a fourth electrode part 2143 bb.

The second portion 2143 b may be electrically connected to the fourthsemiconductor layer 2123 through the plurality of third openings h3 andthe plurality of fifth-b openings h5 b.

The fourth electrode part 2143 bb of the second portion 2143 b may beprovided to contact the upper surface of the fourth semiconductor layer2123 through the plurality of third openings h3 in the region in whichthe second light emitting structure 2120 is provided.

The fourth electrode part 2143 bb of the second portion 2143 b may beprovided to directly contact the light transmissive electrode layer 2230disposed under the plurality of third openings h3 in the region in whichthe second light emitting structure 2120 is provided. The fourthelectrode part 2143 bb of the second portion 2143 b may be disposed todirectly contact the upper surface of the light transmissive electrodelayer 2230 exposed by the plurality of third openings h3 in the regionin which the second light emitting structure 2120 is provided.

The third electrode part 2143 ba of the second portion 2143 b may beprovided to directly contact the upper surface of the fourthsemiconductor layer 2123 through the plurality of fifth-b openings h5 bin the region in which the second light emitting structure 2120 isprovided.

The third electrode part 2143 ba of the second portion 2143 b may bedisposed to directly contact the light transmissive electrode layer 2230disposed under the plurality of fifth-b openings h5 b in the region inwhich the second light emitting structure 2120 is provided. The thirdelectrode part 2143 ba of the second portion 2143 b may be disposed todirectly contact the upper surface of the light transmissive electrodelayer 2230 exposed by the plurality of fifth-b openings h5 b in theregion in which the second light emitting structure 2120 is provided.

According to an embodiment, the third portion 2143 c of the connectionelectrode 2143 may be disposed on the boundary area between the firstlight emitting structure 2110 and the second light emitting structure2120. The third portion 2143 c of the connection electrode 2143 may beelectrically connected to the first portion 2143 a and the secondportion 2143 b.

According to the light emitting device of an embodiment, the firstelectrode 2141 may be electrically connected to the second semiconductorlayer 2113. The second electrode 2142 may be electrically connected tothe third semiconductor layer 2121. Also, the connection electrode 2143may be electrically connected to the first semiconductor layer 2111 andthe fourth semiconductor layer 2123.

Thus, according to an embodiment, as power is supplied to the firstelectrode 2141 and the second electrode 2142, it is possible that thefirst electrode 2141, the second semiconductor layer 2113, the firstsemiconductor layer 2111, the connection electrode 2143, the fourthsemiconductor layer 2123, the third semiconductor layer 2121, and thesecond electrode 2142 may be electrically connected to each other inseries.

According to an embodiment, an area on which the first electrode part2143 ab contacts the first semiconductor layer 2111 may be provided tobe greater than that on which the third electrode part 2143 ba contactsthe fourth semiconductor layer 2123.

The area on which the first electrode part 2143 ab contacts the firstsemiconductor layer 2111 may correspond to the sum of the area on whichthe first electrode part 2143 ab directly contacts the upper surface ofthe first semiconductor layer 2111 through the plurality of sixth-aopenings h6 a and the area on which the first electrode part 2143 abdirectly contacts the upper surface of the first semiconductor layer2111 through the line opening TH1 in the region in which the first lightemitting structure 2110 is provided.

Also, the area on which the third electrode part 2143 ba contacts thefourth semiconductor layer 2123 may correspond to the area on which thethird electrode part 2143 ba directly contacts the light transmissiveelectrode layer 2230 disposed under the plurality of fifth-b openings h5b in the region in which the first light emitting structure 2110 isprovided. The area on which the third electrode part 2143 ba contactsthe fourth semiconductor layer 2123 may correspond to the area on whichthe third electrode part 2143 a directly contacts the upper surface ofthe light transmissive electrode layer 2230 exposed by the plurality offifth-b openings h5 b in the region in which the first light emittingstructure 2110 is provided.

For example, the area on which the first electrode part 2143 ab contactsthe first semiconductor layer 2111 may be provided to a size equal to orgreater than 1.4% and equal to or smaller than 3.3% of a size of thelower surface of the substrate 2105. Also, the area on which the thirdelectrode part 2143 ab contacts the fourth semiconductor layer 2123 maybe provided to a size equal to or greater than 0.7% and equal to orsmaller than 3.0% of a size of the lower surface of the substrate 2105.

According to an embodiment, the area on which the first electrode part2143 ab contacts the first semiconductor layer 2111 may be provided tobe greater 1.1 times to 2 times than that on which the third electrodepart 2143 ba contacts the fourth semiconductor layer 2123.

As described above, the area on which the first electrode part 2143 abcontacts the first semiconductor layer 2111 may be provided to begreater than that on which the third electrode part 2143 ba contacts thefourth semiconductor layer 2123, and thus, carriers may be smoothlyspread, and an operation voltage may be prevented from increasing.

The first electrode 2141, the second electrode 2142, and the connectionelectrode 2143 may be provided in a single layer or a multilayerstructure. For example, each of the first electrode 2141, the secondelectrode 2142, and the connection electrode 2143 may be an ohmicelectrode. For example, each of the first electrode 2141, the secondelectrode 2142, and the connection electrode 2143 may be formed of atleast one of ZnO, IrO_(x), RuO_(x), NiO, RuO_(x)/ITO, Ni/IrO_(x)/Au,Ni/IrO_(x)/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au,or Hf or an alloy of two or more materials thereof.

The light emitting device 2100 according to an embodiment may comprise aprotective layer 2150, as illustrated in FIG. 12 .

For clarity, in FIG. 11 , the protective layer 2150 is not shown so thatthe arrangement relationship between the first electrode 2141, thesecond electrode 2142, the connection electrode 2143, and the reflectivelayer, which are disposed under the protective layer 2150 is wellrepresented.

The protective layer 2150 may be disposed on the first electrode 2141,the second electrode 2142, and the connection electrode 2143.

The protective layer 2150 may be disposed on the reflective layer 2160.The protective layer 2150 may be disposed on the first reflective layer2161, the second reflective layer 2162, and the third reflective layer2163.

An arrangement position and shape of the protective layer 2150 will befurther described with reference to the method of manufacturing thelight emitting device according to an embodiment.

For example, the protective layer 2150 may be formed of an insulationmaterial. For example, the protective layer 2150 may be formed of atleast one material selected from the group including SixOy, SiO_(x)Ny,SixNy, and AlxOy.

As illustrated in FIG. 11 , the light emitting device 2100 may comprisea first bonding part 2171 and a second bonding part 2172, which aredisposed on the protective layer 2150.

The first bonding part 2171 may be disposed on the first reflectivelayer 2161. Also, the second bonding part 2172 may be disposed on thesecond reflective layer 2162. The second bonding part 2172 may be spacedapart from the first bonding part 2171.

The first bonding part 2171 may be disposed on the first electrode 2141.The first bonding part 2171 may be electrically connected to the firstelectrode 2141.

The first bonding part 2171 may be disposed on the first light emittingstructure 2110. The first bonding part 2171 may be disposed on thesecond semiconductor layer 2113.

The first bonding part 2171 may be disposed on the connection electrode2143. The first bonding part 2171 may be disposed on the first portion2143 a of the connection electrode 2143. The first bonding part 2171 maybe disposed on the second electrode part 2143 ab of the connectionelectrode 2143.

The second bonding part 2172 may be disposed on the second electrode2142. The second bonding part 2172 may be electrically connected to thesecond electrode 2142.

The second bonding part 2172 may be disposed on the second lightemitting structure 2120. The second bonding part 2172 may be disposed onthe fourth semiconductor layer 2123.

The second bonding part 2172 may be disposed on the connection electrode2143. The second bonding part 2172 may be disposed on the second portion2143 b of the connection electrode 2143. The second bonding part 2172may be disposed on the fourth electrode part 2143 bb of the connectionelectrode 2143.

According to an embodiment, as illustrated in FIG. 11 , the connectionelectrode 2143 may comprise a first portion 2143 a disposed on the firstsemiconductor layer 2111, a second portion 2143 b disposed on the fourthsemiconductor layer 2123, and a third portion 2143 c connecting thefirst portion 2143 a to the second portion 2143 a.

The first portion 2143 a of the connection electrode 2143 may comprise afirst electrode part 2143 aa that does not overlap the first bondingpart 2171 and a second electrode part 2143 ab that overlaps the firstbonding part 2171 in the first direction perpendicular to the uppersurface of the substrate 2105.

The second portion 2143 b of the connection electrode 2143 may comprisea third electrode part 2143 ba that does not overlap the second bondingpart 2172 and a fourth electrode part 2143 bb that overlaps the secondbonding part 2172 in the first direction.

According to an embodiment, an area on which the first electrode part2143 ab contacts the first semiconductor layer 2111 may be provided tobe greater than that on which the third electrode part 2143 ba contactsthe fourth semiconductor layer 2123.

For example, the area on which the first electrode part 2143 ab contactsthe first semiconductor layer 2111 may be provided to a size equal to orgreater than 1.4% and equal to or smaller than 3.3% of a size of thelower surface of the substrate 2105. Also, the area on which the thirdelectrode part 2143 ab contacts the fourth semiconductor layer 2123 maybe provided to a size equal to or greater than 0.7% and equal to orsmaller than 3.0% of a size of the lower surface of the substrate 2105.

According to an embodiment, the area on which the first electrode part2143 ab contacts the first semiconductor layer 2111 may be provided tobe greater 1.1 times to 2 times than that on which the third electrodepart 2143 ba contacts the fourth semiconductor layer 2123.

Since an area on which the first electrode part 2143 ab contacts thefirst semiconductor layer 2111 is greater than that on which the thirdelectrode part 2143 ba contacts the fourth semiconductor layer 2123, itmay be advantageous in terms of current spreading and current injectioncharacteristics in the structure in which the first semiconductor layer2111 and the fourth semiconductor layer 2123 are connected to each otherin series.

Also, an area on which the first electrode part 2143 ab contacts thefirst semiconductor layer 2111 may be provided to a size equal to orgreater than 1.4% of a size of a lower surface of the substrate 2105 toefficiently perform the current spreading in the first semiconductorlayer 2111. The area on which the first electrode part 2143 ab contactsthe first semiconductor layer 2111 may be provided to a size equal to orsmaller than 3.3% of a size of the lower surface of the substrate 2105to adjust an area of the first active layer 2112 to be etched by thefirst electrode part 2143 ab, thereby improving the light extractionefficiency of the first light emitting structure 2110.

Also, an area on which the third electrode part 2143 ba contacts thefourth semiconductor layer 2111 may be provided to a size equal to orgreater than 0.7% of a size of the lower surface of the substrate 2105to efficiently perform the current spreading in the fourth semiconductorlayer 2123. The area on which the third electrode part 2143 ba contactsthe fourth semiconductor layer 2123 may be provided to a size equal toor smaller than 3.0% of a size of the lower surface of the substrate2105 to reduce an amount of light that is absorbed and lost by the thirdelectrode part 2143 ba, thereby improving the light extractionefficiency of the second light emitting structure 2120.

According to an embodiment, as power is applied to the first bondingpart 2171 and the second bonding part 2172, the first and second lightemitting structures 2110 and 2120 may emit light.

As the power is supplied to the first bonding part 2171 and secondbonding part 2172, it is possible that the first bonding part 2171, thefirst electrode 2141, the second semiconductor layer 2113, the firstsemiconductor layer 2111, the connection electrode 2143, the fourthsemiconductor layer 2123, the third semiconductor layer 2121, the secondelectrode 2142, and the second bonding part 2172 may be electricallyconnected to each other in series.

According to an embodiment, a high voltage may be applied between thefirst bonding part 2171 and the second bonding part 2172, and theapplied high voltage may be dispersed and supplied to the first andsecond light emitting structures 2110 and 2120 through the firstelectrode 2141, the connection electrode 2143, and the second electrode2142.

As described above, according to the light emitting device 2100 of anembodiment, the first bonding part 2171 and the first electrode 2141 maycontact each other in a plurality of areas. Also, the second bondingpart 2172 and the second electrode 2142 may contact each other on aplurality of areas. Thus, according to an embodiment, since the power issupplied through the plurality of areas, there is an advantage that thecurrent dispersion effect is generated, and the operation voltage isreduced by the increase in contact area and the dispersion of thecontact area.

Also, when the power is applied to the first bonding part 2171 and thesecond bonding part 2172, the area on which the first electrode part2143 ab contacts the first semiconductor layer 2111 may be provided tobe greater than that on which the third electrode part 2143 ba contactsthe fourth semiconductor layer 2123, and thus, carriers may be smoothlyspread, and an operation voltage may be prevented from increasing.

The light emitting device according to an embodiment may be connected toan external power in a flip chip bonding manner. For example, in themanufacturing of the light emitting device package, the upper surface ofthe first bonding part 2171 and the upper surface of the second bondingpart 2172 may be disposed to be attached to a submount, a lead frame, acircuit board, or the like.

When the light emitting device according to an embodiment is mounted inthe flip chip bonding manner to implement the light emitting devicepackage, light provided from the first and second light emittingstructures 2110 and 2120 may be emitted through the substrate 2105. Thelight emitted from the first and second light emitting structures 2110and 2120 may be reflected by the first to third reflective layers 2161,2162 and 2163 so as to be emitted toward the substrate 2105.

Also, according to the light emitting device and the light emittingdevice package of an embodiment, since the first bonding part 2171 andthe second bonding part 2172, each of which has a large area, may bedirectly bonded to the circuit board providing the power to easily andstably perform a flip chip bonding process.

According to an embodiment, a size of the first reflective layer 2161may be provided to several micrometers larger than that of the firstbonding part 2171. For example, an area of the first reflective layer2161 may be provided to a size that is sufficient to completely coverthe area of the first bonding part 2171. In consideration of a processerror, a length of one side of the first reflective layer 2161 may begreater, for example, about 4 micrometers to about 10 micrometers thanthat of one side of the first bonding part 2171.

Also, the size of the second reflective layer 2162 may be provided to beseveral micrometers greater than that of the second bonding part 2172.For example, an area of the second reflective layer 2162 may be providedto a size that is sufficient to completely cover the area of the secondbonding part 2172. In consideration of a process error, a length of oneside of the second reflective layer 2162 may be greater, for example,about 4 micrometers to about 10 micrometers than that of one side of thesecond bonding part 2172.

According to an embodiments, light emitted from the first and secondlight emitting structures 2110 and 2120 may not be incident into thefirst bonding part 2171 and the second bonding part 2172 but bereflected by the first bonding part 2171 and the second bonding part2172. Accordingly, according to an embodiment, a loss of the lightgenerated in and emitted from the first and second light emittingstructures 2110 and 2120 because the light is incident into the firstbonding part 2171 and the second bonding part 2172 may be minimized.

Also, according to the light emitting device 2100 according to anembodiment, since the third reflective layer 2163 is disposed betweenthe first bonding part 2171 and the second bonding part 2172, emissionof light between the first bonding part 2171 and the second bonding part2172 may be minimized.

Also, a minimum distance between the first bonding part 2171 and thesecond bonding part 2172 may be provided to be equal to or greater than125 micrometers. The minimum distance between the first bonding part2171 and the second bonding part 2172 may be selected in considerationof an interval between a first electrode pad and a second electrode padof the package body, on which the light emitting device 2100 is mounted.

For example, a minimum distance between the first electrode pad and thesecond electrode pad of the package body may be provided to minimum 125micrometers and may be provided to maximum 200 micrometers. Here, whenconsidering the process error, the distance between the first bondingpart 2171 and the second bonding part 2172 may be, for example, 125micrometers or more and 300 micrometers or less.

Also, the distance between the first bonding part 2171 and the secondbonding part 2172 has to be greater than 125 micrometers so that aminimum space is secured to prevent the short circuit between the firstbonding part 2171 and the second bonding part 2172 of the light emittingdevice from occurring, and the light emitting area for improving thelight extraction efficiency is secured to increase in light intensity Poof the light emitting device 2100.

Also, the distance between the first bonding part 2171 and the secondbonding part 2172 has to be equal to or smaller than 300 micrometers sothat the first and second electrode pads of the light emitting devicepackage and the first and second bonding parts 2171 and 2172 of thelight emitting device are bonded to each other with sufficient bondingforce, and the electrical characteristics of the light emitting device2100 is secured.

The minimum distance between the first bonding part 2171 and the secondbonding part 2172 may be greater than 125 micrometers to secure opticalcharacteristics and also less than 300 micrometers to secure theelectrical characteristics and reliability by the bonding force.

In an embodiment, for example, the distance between the first bondingpart 2171 and the second bonding part 2172 is provided to 125micrometers or more and 300 micrometers or less. However, thisembodiment is not limited thereto, and the distance between the firstbonding part 2171 and the second bonding part 2172 may be less than 125micrometers to improve the electrical characteristics or the reliabilityof the light emitting device package and may be greater than 300micrometers to improve the optical properties.

Also, according to the light emitting device 2100 according to anembodiment, the first reflective layer 2161 is disposed under the firstelectrode 2141, and the second reflective layer 2162 is disposed underthe second electrode 2142. Thus, the first reflective layer 2161 and thesecond reflective layer 2162 reflect light emitted from the first andsecond active layers 2112 and 2122 of the first and second lightemitting structures 2110 and 2120 to minimize the light absorption ofthe first electrode 2141 and the second electrode 2142, therebyimproving the light intensity Po.

For example, each of the first reflective layer 2161 and the secondreflective layer 2162 may be formed of an insulation material, and maybe formed of a high reflectance material, for example, have a DBRstructure to reflect the light emitted from the active layer.

Each of the first reflective layer 2161 and the second reflective layer2162 may have the DBR structure in which materials having differentrefractive indexes are repeatedly arranged with each other. For example,each of the first reflective layer 2161 and the second reflective layer2162 may be disposed in a single layer or laminated structure that isformed of at least one or more of TiO₂, SiO₂, Ta₂O₅, and HfO₂.

Also, according to another embodiment, the present invention is notlimited thereto. For example, the first reflective layer 2161 and thesecond reflective layer 2162 may be freely selected so that thereflectivity with respect to the light emitted from the first and secondactive layers 2112 and 2122 is adjusted according to wavelengths of thelight emitted from the first and second active layers 2112 and 2122.

Also, according to another embodiment, each of the first reflectivelayer 2161 and the second reflective layer 2162 may be provided as anODR layer. According to another embodiment, the first reflective layer2161 and the second reflective layer 2162 may be provided in a hybridform in which the DBR layer and the ODR layer are laminated.

For example, each of the first bonding part 2171 and the second bondingpart 2172 may be formed of Au, AuTi, or the like to stably drive themounting process. Also, each of the first bonding part 2171 and thesecond bonding part 2172 may be provided as a single layer or amultilayer by using one or more materials selected from the groupincluding Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Agalloy, Au, Hf, Pt, Ru, Rh, ZnO, IrO_(x), RuO_(x), NiO, RuO_(x)/ITO,Ni/IrO_(x)/Au, and Ni/IrO_(x)/Au/ITO, or an alloy thereof.

As described above, the light emitting device 2100 according to anembodiment may be mounted in the flip chip bonding manner and providedin the form of the light emitting device package. Here, when the packagebody on which the light emitting device 2100 is mounted is formed of aresin, the package body may be discolored or cracked by strong lighthaving a short wavelength, which is emitted from the light emittingdevice 2100 in a region under the light emitting device 2100.

However, according to the light emitting device 2100 of an embodiment,the emission of the light between the regions in which the first bondingpart 2171 and the second bonding part 2172 are disposed may be reducedto prevent the package body disposed in a region under the lightemitting device 2100 from being discolored or cracked.

Next, a method of manufacturing a light emitting device according to anembodiment will be described with reference to the accompanyingdrawings. In the description of the method of manufacturing the lightemitting device according to an embodiment, descriptions overlappingwith those described with reference to FIGS. 11 and 12 may be omitted.

First, according to the method of manufacturing the light emittingdevice according to an embodiment, as illustrated in FIGS. 13 a and 13 b, a light emitting structure may be formed on a substrate 2105.

FIG. 13 a is a plan view illustrating a configuration of the lightemitting structure formed according to the method of manufacturing thelight emitting device of an embodiment, and FIG. 13 b is a plan viewillustrating a result obtained by performing a unit process illustratedin FIG. 13 a.

According to an embodiment, the light emitting structure may be formedon the substrate 2105. For example, a first conductivity typesemiconductor layer, an active layer, and a second conductivity typesemiconductor layer may be formed on the substrate 2105.

Also, according to an embodiment, a current spreading layer 2220 may beformed on the light emitting structure. The current spreading layer 2220may be formed on the second conductivity type semiconductor layer. Thecurrent spreading layer 2220 may be provided in plurality that arespaced apart from each other.

For example, the current spreading layer 2220 may be formed of an oxideor nitride.

Next, as illustrated in FIGS. 14 a and 14 b , a light transmissiveelectrode layer 2230 may be formed.

FIG. 14 a is a plan view illustrating a configuration of the lighttransmissive electrode layer formed according to the method ofmanufacturing the light emitting device of an embodiment, and FIG. 14 bis a plan view illustrating a result obtained by performing a unitprocess illustrated in FIG. 14 a.

According to an embodiment, the transmissive electrode layer 2230 may beformed on the light emitting structure, and then, mesa etching may beperformed. The transmissive electrode layer 2230 may be formed on thesecond conductivity type semiconductor layer 103, and the mesa etchingprocess exposing the first conductivity type semiconductor layer may beperformed.

According to an embodiment, a portion of the first conductivity typesemiconductor layer may be exposed through the mesa etching process.Thus, a plurality of mesa recesses M through which a portion of thefirst conductivity type semiconductor layer is exposed may be formed bythe mesa etching process. Also, a mesa recess line ML may be formed bythe mesa etching process to divide the light emitting structure into afirst light emitting structure 2110 and a second light emittingstructure 2120.

The first light emitting structure 2110 may comprise a firstconductivity type first semiconductor layer 2111, a first active layer2112, and a second conductivity type second semiconductor layer 2113. Inaddition, the second light emitting structure 2120 may comprise a firstconductivity type third semiconductor layer 2121, a second active layer2122, and a second conductivity type fourth semiconductor layer 2123.

According to an embodiment, an upper surface of the first semiconductorlayer 2111 or an upper surface of the third semiconductor layer 2121 maybe exposed in areas of the plurality of mesa recesses M. Also, aboundary area between the first semiconductor layer 2111 and the thirdsemiconductor layer 2121 may be exposed in an area of the mesa recessline ML.

For example, the mesa recesses M may be provided in a plurality ofcircular shapes. Each of the mesa recesses M may be provided in variousshapes such as an oval or a polygon as well as the circular shape.

Also, the mesa recess line ML may be formed in a line shape having apredetermined width. For example, the mesa recess line ML may be formedto have different widths according to areas.

According to an embodiment, the transmissive electrode layer 2230 may beformed on the second conductivity type semiconductor layer. The lighttransmissive electrode layer 2230 may comprise a plurality of openingsprovided in regions corresponding to the mesa recesses M.

Also, the light transmissive electrode layer 2230 may comprise aline-shaped opening provided in a region corresponding to the mesarecess line ML.

Next, as illustrated in FIGS. 15 a and 15 b , an isolation process maybe performed.

FIG. 15 a is a plan view illustrating a configuration of a mask forperforming an isolation process according to the method of manufacturingthe light emitting device of an embodiment, and FIG. 15 b is a plan viewillustrating a result obtained by performing a unit process illustratedin FIG. 15 a.

According to an embodiment, the isolation process for separating thefirst light emitting structure 2110 and the second light emittingstructure 2120 from each other may be performed.

An isolation line IL may be formed to separate the first light emittingstructure 2110 and the second light emitting structure 2120 from eachother by the isolation process. The upper surface of the substrate 2105may be exposed in an area on which the isolation line IL is formed.

The first light emitting structure 2110 and the second light emittingstructure 2120 may be electrically separated from each other. The firstsemiconductor layer 2111 and the third semiconductor layer 2121 may beprovided to be separated from each other. The first semiconductor layer2111 and the third semiconductor layer 2121 may be electricallyseparated from each other.

Next, as illustrated in FIGS. 16 a and 16 b , a reflective layer 2160may be formed.

FIG. 16 a is a plan view illustrating a configuration of the reflectivelayer formed according to the method of manufacturing the light emittingdevice of an embodiment, and FIG. 16 b is a plan view illustrating aresult obtained by performing a unit process illustrated in FIG. 16 a.

The reflective layer 2160 may comprise a first reflective layer 2161, asecond reflective layer 2162, and a third reflective layer 2163. Thereflective layer 2160 may be disposed on the light transmissiveelectrode layer 2230. The reflective layer 2160 may be disposed on thefirst light emitting structure 2110 and the second light emittingstructure 2120.

The first reflective layer 2161 and the second reflective layer 2162 maybe spaced apart from each other. The third reflective layer 2163 may bedisposed between the first reflective layer 2161 and the secondreflective layer 2162. The first to third reflective layers 2161, 2162and 2163 may be formed as one layer connected to each other.

The first reflective layer 2161 may comprise a plurality of openings.The first reflective layer 2161 may comprise a plurality of firstopenings h1 overlapping the current spreading layer 2220 in a firstdirection perpendicular to the upper surface of the substrate 2105.Also, the first reflective layer 2161 may comprise a plurality of secondopenings h2 overlapping the plurality of mesa recesses M in the firstdirection.

The light transmissive electrode layer 2230 disposed on the currentspreading layer 2220 may be exposed through the plurality of firstopenings h1. An upper surface of the first semiconductor layer 2111 ofthe first light emitting structure 2110 may be exposed through theplurality of second openings h2.

For example, the plurality of first openings h1 may be arranged in aplurality of line shapes along a long axis direction of the substrate2105. Also, the plurality of second openings h2 may be provided in aplurality of line shapes along the long axis direction of the substrate2105. The plurality of first openings h1 and the plurality of secondopenings h2 may be alternatively arranged in a short axis direction ofthe substrate 2105.

The second reflective layer 2162 may comprise a plurality of openings.The second reflective layer 2162 may comprise a plurality of thirdopenings h3 overlapping the current spreading layer 2220 in the firstdirection perpendicular to the upper surface of the substrate 2105.Also, the second reflective layer 2162 may comprise a plurality offourth openings h4 overlapping the plurality of mesa recesses M in thefirst direction.

The light transmissive electrode layer 2230 disposed on the currentspreading layer 2220 may be exposed through the plurality of thirdopenings h3. An upper surface of the third semiconductor layer 2121 ofthe second light emitting structure 2120 may be exposed through theplurality of fourth openings h4.

For example, the plurality of third openings h3 may be provided in aplurality of line shapes along the long axis direction of the substrate2105. Also, the plurality of fourth openings h4 may be arranged in aplurality of line shapes along the long axis direction of the substrate2105. The plurality of third openings h3 and the plurality of fourthopenings h4 may be alternatively arranged in the short axis direction ofthe substrate 2105.

The third reflective layer 2163 may comprise a plurality of openings.The third reflective layer 2163 may comprise a plurality of fifthopenings h5 overlapping the current spreading layer 2220 in the firstdirection perpendicular to the upper surface of the substrate 2105.

The plurality of fifth openings h5 may comprise a plurality of fifth-aopenings h5 a exposing the transmissive electrode layer 2230 disposed onthe current spreading layer 2220 in a region in which the first lightemitting structure 2110 is provided. Also, the plurality of fifthopenings h5 may expose a plurality of fifth-b openings h5 b exposing thetransmissive electrode layer 2230 disposed on the current spreadinglayer 2220 in a region in which the second light emitting structure 2120is provided.

Also, the third reflective layer 2163 may comprise a plurality of sixthopenings h6 overlapping the plurality of mesa recesses M in the firstdirection. Also, the third reflective layer 2163 may comprise a lineopening TH1 overlapping the mesa recess line ML in the first direction.

The plurality of sixth openings h6 may comprise a plurality of sixth-aopenings h6 a exposing upper surfaces of the first semiconductor layer2111 of the first light emitting structure 2110. Also, the sixthopenings h6 may comprise a plurality of sixth-b openings h6 b exposingupper surfaces of the third semiconductor layer 2121 of the second lightemitting structure 2120. The line opening TH1 may expose a upper surfaceof the first semiconductor layer 2111 of the first light emittingstructure 2110.

For example, the plurality of fifth openings h5 may be arranged in aplurality of line shapes along the short axis direction of the substrate2105. Also, the plurality of sixth openings h6 may be provided in aplurality of line shapes along the short axis direction of the substrate2105. The plurality of fifth openings h5 and the plurality of sixthopenings h6 may be alternatively arranged in the long axis direction ofthe substrate 2105.

Also, the line opening TH1 may be provided in a line shape along theshort axis direction of the substrate 2105. An area of the line openingTH1 may be larger than that of one opening constituting the plurality offifth openings h5.

For example, an area of the line opening TH1 may be provided to begreater five times than that of one opening constituting the pluralityof fifth openings h5. An area of the line opening TH1 may be provided tobe greater 9 times than that of one opening constituting the pluralityof fifth openings h5.

The effect of the size of the area of the line opening TH1 will bedescribed later.

Subsequently, as illustrated in FIGS. 17 a and 17 b , a first electrode2141, a second electrode 2142, and a connection electrode 2143 may beformed.

FIG. 17 a is a plan view illustrating configurations of the firstelectrode, the second electrode, and the connection electrode, which areformed according to the method of manufacturing the light emittingdevice of an embodiment, and FIG. 17 b is a plan view illustrating aresult obtained by performing a unit process illustrated in FIG. 17 a.

According to an embodiment, the first electrode 2141 and the secondelectrode 2142 may be spaced apart from each other. The connectionelectrode 2143 may be disposed between the first electrode 2141 and thesecond electrode 2142.

The first electrode 2141 may be disposed on the first reflective layer2161. A partial portion of the first electrode 2141 may be disposed onthe third reflective layer 2163.

The first electrode 2141 may be electrically connected to the secondsemiconductor layer 2113. The first electrode 2141 may be electricallyconnected to the second semiconductor layer 2113 through the pluralityof first openings h1. The first electrode 2141 may be disposed todirectly contact the light transmissive electrode layer 2230 disposedunder the plurality of first openings h1 in a region in which the firstlight emitting structure 2110 is provided. The first electrode 2141 maybe disposed to directly contact a upper surface of the lighttransmissive electrode layer 2230 exposed by the plurality of firstopenings h1 in the region in which the first light emitting structure2110 is provided.

The second electrode 2142 may be disposed on the second reflective layer2162. A partial portion of the second electrode 2142 may be disposed onthe third reflective layer 2163.

The second electrode 2142 may be electrically connected to the thirdsemiconductor layer 2121. The second electrode 2142 may be electricallyconnected to the third semiconductor layer 2121 through the plurality offourth openings h4. The second electrode 2142 may be in direct contactwith the third semiconductor layer 2121 disposed under the plurality offourth openings h4 in a region in which the second light emittingstructure 2120 is provided. The second electrode 2142 may be disposed indirect contact with an upper surface of the third semiconductor layer2121 exposed by the plurality of fourth openings h4 in the region wherethe second light emitting structure 2120 is provided.

The connection electrode 2143 may be disposed on the third reflectivelayer 2163. A partial portion of the connection electrode 2143 may bedisposed on the first reflective layer 2161. A partial portion of theconnection electrode 2143 may be disposed on the second reflective layer2162.

The connection electrode 2143 may be electrically connected to the firstsemiconductor layer 2111 and the fourth semiconductor layer 2123.

The connection electrode 2143 may comprise a first portion 2143 adisposed on the first semiconductor layer 2111, a second portion 2143 bdisposed on the fourth semiconductor layer 2123, and a third portion2143 c connecting the first portion 2143 a to the second portion 2143 a.

The connection electrode 2143 may comprise the first portion 2143 adisposed on the region in which the first light emitting structure 2110is provided. The connection electrode 2143 may comprise a second portion2143 b disposed on the region in which the second light emittingstructure 2120 is provided. The connection electrode 2143 may comprisethe third portion 2143 c having a portion disposed on an area on whichthe first light emitting structure 2110 is disposed and a portiondisposed on an area on which the second light emitting structure 2120 isdisposed. Also, a portion of the third portion 2143 c may be disposed ona boundary area between the first light emitting structure 2110 and thesecond light emitting structure 2120.

According to an embodiment, the first portion 2143 a may comprise afirst electrode part 2143 aa and a second electrode part 2143 ab.

The first portion 2143 a may be electrically connected to the firstsemiconductor layer 2111 through the plurality of second openings h2,the plurality of sixth-a openings h6 a, and the line opening TH1.

The second electrode part 2143 ab of the first portion 2143 a may beprovided in direct contact with the upper surface of the firstsemiconductor layer 2111 through the plurality of second openings h2 inthe region in which the first light emitting structure 2110 is provided.

The first electrode part 2143 aa of the first portion 2143 a may beprovided in direct contact with the upper surface of the firstsemiconductor layer 2111 through the plurality of sixth-a openings h6 ain the region in which the first light emitting structure 2110 isprovided.

The first electrode part 2143 aa of the first portion 2143 a may beprovided in direct contact with the upper surface of the firstsemiconductor layer 2111 through the line opening TH1 in the region inwhich the first light emitting structure 2110 is provided.

According to an embodiment, the second portion 2143 b may comprise athird electrode part 2143 ba and a fourth electrode part 2143 bb.

The second portion 2143 b may be electrically connected to the fourthsemiconductor layer 2123 through the plurality of third openings h3 andthe plurality of fifth-b openings h5 b.

The fourth electrode part 2143 bb of the second portion 2143 b may beprovided to contact the upper surface of the fourth semiconductor layer2123 through the plurality of third openings h3 in the region in whichthe second light emitting structure 2120 is provided.

The fourth electrode part 2143 bb of the second portion 2143 b may beprovided to directly contact the light transmissive electrode layer 2230disposed under the plurality of third openings h3 in the region in whichthe second light emitting structure 2120 is provided. The fourthelectrode part 2143 bb of the second portion 2143 b may be disposed todirectly contact the upper surface of the light transmissive electrodelayer 2230 exposed by the plurality of third openings h3 in the regionin which the second light emitting structure 2120 is provided.

The third electrode part 2143 ba of the second portion 2143 b may beprovided to directly contact the upper surface of the fourthsemiconductor layer 2123 through the plurality of fifth-b openings h5 bin the region in which the second light emitting structure 2120 isprovided.

The third electrode part 2143 ba of the second portion 2143 b may bedisposed to directly contact the light transmissive electrode layer 2230disposed under the plurality of fifth-b openings h5 b in the region inwhich the second light emitting structure 2120 is provided. The thirdelectrode part 2143 ba of the second portion 2143 b may be disposed todirectly contact the upper surface of the light transmissive electrodelayer 2230 exposed by the plurality of fifth-b openings h5 b in theregion in which the second light emitting structure 2120 is provided.

According to an embodiment, the third portion 2143 c of the connectionelectrode 2143 may be disposed on the boundary area between the firstlight emitting structure 2110 and the second light emitting structure2120. The third portion 2143 c of the connection electrode 2143 may beelectrically connected to the first portion 2143 a and the secondportion 2143 b.

According to the light emitting device of an embodiment, the firstelectrode 2141 may be electrically connected to the second semiconductorlayer 2113. The second electrode 2142 may be electrically connected tothe third semiconductor layer 2121. Also, the connection electrode 2143may be electrically connected to the first semiconductor layer 2111 andthe fourth semiconductor layer 2123.

Thus, according to an embodiment, as power is supplied to the firstelectrode 2141 and the second electrode 2142, it is possible that thefirst electrode 2141, the second semiconductor layer 2113, the firstsemiconductor layer 2111, the connection electrode 2143, the fourthsemiconductor layer 2123, the third semiconductor layer 2121, and thesecond electrode 2142 may be electrically connected to each other inseries.

Next, as illustrated in FIGS. 18 a and 18 b , a protective layer 2150may be formed.

FIG. 18 a is a plan view illustrating a configuration of the protectivelayer formed according to the method of manufacturing the light emittingdevice of an embodiment, and FIG. 18 b is a plan view illustrating aresult obtained by performing a unit process illustrated in FIG. 18 a.

The protective layer 2150 may be disposed on the first electrode 2141and the second electrode 2142. The protective layer 2150 may be disposedon the connection electrode 2143. The protective layer 2150 may bedisposed on the reflective layer 2160.

The protective layer 2150 may comprise a first contact portion c1exposing an upper surface of the first electrode 2141. The protectivelayer 2150 may comprise a plurality of first contact portions c1exposing the upper surface of the first electrode 2141. The plurality offirst contact portions c1 may be provided on an area on which the firstreflective layer 2161 is disposed.

The protective layer 2150 may comprise a second contact portion c2exposing an upper surface of the second electrode 2142. The protectivelayer 2150 may comprise a plurality of second contact portions c2exposing a plurality of upper surfaces of the second electrode 2142. Thesecond contact portion c2 may be provided on an area on which the secondreflective layer 2162 is disposed.

Subsequently, as illustrated in FIGS. 19 a and 19 b , a first bondingpart 2171 and a second bonding part 2172 may be formed.

FIG. 19 a is a plan view illustrating configurations of the first andsecond bonding parts formed according to the method of manufacturing thelight emitting device of an embodiment, and FIG. 19 b is a plan viewillustrating a result obtained by performing a unit process illustratedin FIG. 19 a.

According to an embodiment, each of the first bonding part 2171 and thesecond bonding part 2172 may be formed in the shape illustrated in FIG.19 a . The first bonding part 2171 and the second bonding part 2172 maybe disposed on the protective layer 2150.

The first bonding part 2171 may be disposed on the first reflectivelayer 2161. The second bonding part 2172 may be disposed on the secondreflective layer 2162. The second bonding part 2172 may be spaced apartfrom the first bonding part 2171.

The first bonding part 2171 may be disposed on the first electrode 2141.The first bonding part 2171 may be electrically connected to the firstelectrode 2141.

The first bonding part 2171 may be electrically connected to the firstelectrode 2141 through the first contact portion c1 provided in theprotective layer 2150. The first bonding part 2171 may be disposed todirectly contact an upper surface of the first electrode 2141 throughthe first contact portion c1 provided in the protective layer 2150.

The first bonding part 2171 may be disposed on the first light emittingstructure 2110. The first bonding part 2171 may be disposed on thesecond semiconductor layer 2113.

The first bonding part 2171 may be disposed on the connection electrode2143. The first bonding part 2171 may be disposed on the first portion2143 a of the connection electrode 2143. The first bonding part 2171 maybe disposed on the second electrode part 2143 ab of the connectionelectrode 2143.

The second bonding part 2172 may be disposed on the second electrode2142. The second bonding part 2172 may be electrically connected to thesecond electrode 2142.

The second bonding part 2172 may be disposed on the second lightemitting structure 2120. The second bonding part 2172 may be disposed onthe fourth semiconductor layer 2123.

The second bonding part 2172 may be electrically connected to the secondelectrode 2142 through the second contact portion c2 provided in theprotective layer 2150. The second bonding part 2172 may be disposed todirectly contact an upper surface of the second electrode 2142 throughthe second contact portion c2 provided in the protective layer 2150.

The second bonding part 2172 may be disposed on the connection electrode2143. The second bonding part 2172 may be disposed on the second portion2143 b of the connection electrode 2143. The second bonding part 2172may be disposed on the fourth electrode part 2143 bb of the connectionelectrode 2143.

According to an embodiment, the connection electrode 2143 may comprise afirst portion 2143 a disposed on the first semiconductor layer 2111, asecond portion 2143 b disposed on the fourth semiconductor layer 2123,and a third portion 2143 c connecting the first portion 2143 a to thesecond portion 2143 a.

The first portion 2143 a of the connection electrode 2143 may comprise afirst electrode part 2143 aa that does not overlap the first bondingpart 2171 and a second electrode part 2143 ab that overlaps the firstbonding part 2171 in the first direction perpendicular to the uppersurface of the substrate 2105.

The second portion 2143 b of the connection electrode 2143 may comprisea third electrode part 2143 ba that does not overlap the second bondingpart 2172 and a fourth electrode part 2143 bb that overlaps the secondbonding part 2172 in the first direction.

According to an embodiment, an area on which the first electrode part2143 ab contacts the first semiconductor layer 2111 may be provided tobe greater than that on which the third electrode part 2143 ba contactsthe fourth semiconductor layer 2123.

For example, the area on which the first electrode part 2143 ab contactsthe first semiconductor layer 2111 may be provided to a size equal to orgreater than 1.4% and equal to or smaller than 3.3% of a size of thelower surface of the substrate 2105. Also, the area on which the thirdelectrode part 2143 ab contacts the fourth semiconductor layer 2123 maybe provided to a size equal to or greater than 0.7% and equal to orsmaller than 3.0% of a size of the lower surface of the substrate 2105.

According to an embodiment, the area on which the first electrode part2143 ab contacts the first semiconductor layer 2111 may be provided tobe greater 1.1 times to 2 times than that on which the third electrodepart 2143 ba contacts the fourth semiconductor layer 2123.

As described above, the area on which the first electrode part 2143 abcontacts the first semiconductor layer 2111 may be provided to begreater than that on which the third electrode part 2143 ba contacts thefourth semiconductor layer 2123, and thus, carriers may be smoothlyspread, and an operation voltage may be prevented from increasing.

According to an embodiment, as power is applied to the first bondingpart 2171 and the second bonding part 2172, the first and second lightemitting structures 2110 and 2120 may emit light.

As the power is supplied to the first bonding part 2171 and secondbonding part 2172, it is possible that the first bonding part 2171, thefirst electrode 2141, the second semiconductor layer 2113, the firstsemiconductor layer 2111, the connection electrode 2143, the fourthsemiconductor layer 2123, the third semiconductor layer 2121, the secondelectrode 2142, and the second bonding part 2172 may be electricallyconnected to each other in series.

According to an embodiment, a high voltage may be applied between thefirst bonding part 2171 and the second bonding part 2172, and theapplied high voltage may be dispersed and supplied to the first andsecond light emitting structures 2110 and 2120 through the firstelectrode 2141, the connection electrode 2143, and the second electrode2142.

As described above, according to the light emitting device 2100 of anembodiment, the first bonding part 2171 and the first electrode 2141 maycontact each other in a plurality of areas. Also, the second bondingpart 2172 and the second electrode 2142 may contact each other on aplurality of areas. Thus, according to an embodiment, since the power issupplied through the plurality of areas, there is an advantage that thecurrent dispersion effect is generated, and the operation voltage isreduced by the increase in contact area and the dispersion of thecontact area.

Also, when the power is applied to the first bonding part 2171 and thesecond bonding part 2172, the area on which the first electrode part2143 ab contacts the first semiconductor layer 2111 may be provided tobe greater than that on which the third electrode part 2143 ba contactsthe fourth semiconductor layer 2123, and thus, carriers may be smoothlyspread, and an operation voltage may be prevented from increasing.

The light emitting device according to an embodiment may be connected toan external power in a flip chip bonding manner. For example, in themanufacturing of the light emitting device package, the upper surface ofthe first bonding part 2171 and the upper surface of the second bondingpart 2172 may be disposed to be attached to a submount, a lead frame, acircuit board, or the like.

When the light emitting device according to an embodiment is mounted inthe flip chip bonding manner to implement the light emitting devicepackage, light provided from the first and second light emittingstructures 2110 and 2120 may be emitted through the substrate 2105. Thelight emitted from the first and second light emitting structures 2110and 2120 may be reflected by the first to third reflective layers 2161,2162 and 2163 so as to be emitted toward the substrate 2105.

Also, the light emitted from the first and second light emittingstructures 2110 and 2120 may be emitted in a lateral direction of thefirst and second light emitting structures 2110 and 2120.

Also, according to the light emitting device and the light emittingdevice package of an embodiment, since the first bonding part 2171 andthe second bonding part 2172, each of which has a large area, may bedirectly bonded to the circuit board providing the power to easily andstably perform a flip chip bonding process.

According to an embodiment, a size of the first reflective layer 2161may be provided to several micrometers larger than that of the firstbonding part 2171. For example, an area of the first reflective layer2161 may be provided to a size that is sufficient to completely coverthe area of the first bonding part 2171. In consideration of a processerror, a length of one side of the first reflective layer 2161 may begreater, for example, about 4 micrometers to about 10 micrometers thanthat of one side of the first bonding part 2171.

Also, the size of the second reflective layer 2162 may be provided to begreater several micrometers than that of the second bonding part 2172.For example, an area of the second reflective layer 2162 may be providedto a size that is sufficient to completely cover the area of the secondbonding part 2172. In consideration of a process error, a length of oneside of the second reflective layer 2162 may be greater, for example,about 4 micrometers to about 10 micrometers than that of one side of thesecond bonding part 2172.

According to an embodiments, light emitted from the first and secondlight emitting structures 2110 and 2120 may not be incident into thefirst bonding part 2171 and the second bonding part 2172 but bereflected by the first bonding part 2171 and the second bonding part2172. Accordingly, according to an embodiment, a loss of the lightgenerated in and emitted from the first and second light emittingstructures 2110 and 2120 because the light is incident into the firstbonding part 2171 and the second bonding part 2172 may be minimized.

Also, according to the light emitting device 2100 of an embodiment,since the third reflective layer 2163 is disposed between the firstbonding part 2171 and the second bonding part 2172, emission of lightbetween the first bonding part 2171 and the second bonding part 2172 maybe minimized.

Also, a minimum distance between the first bonding part 2171 and thesecond bonding part 2172 may be provided to be equal to or greater than125 micrometers. The minimum distance between the first bonding part2171 and the second bonding part 2172 may be selected in considerationof an interval between a first electrode pad and a second electrode padof the package body, on which the light emitting device 2100 is mounted.

For example, a minimum distance between the first electrode pad and thesecond electrode pad of the package body may be provided to minimum 125micrometers and may be provided to maximum 200 micrometers. Here, whenconsidering the process error, the distance between the first bondingpart 2171 and the second bonding part 2172 may be, for example, 125micrometers or more and 300 micrometers or less.

Also, the distance between the first bonding part 2171 and the secondbonding part 2172 has to be greater than 125 micrometers so that aminimum space is secured to prevent the short circuit between the firstbonding part 2171 and the second bonding part 2172 of the light emittingdevice from occurring, and the light emitting area for improving thelight extraction efficiency is secured to increase in light intensity Poof the light emitting device 2100.

Also, the distance between the first bonding part 2171 and the secondbonding part 2172 has to be equal to or smaller than 300 micrometers sothat the first and second electrode pads of the light emitting devicepackage and the first and second bonding parts 2171 and 2172 of thelight emitting device are bonded to each other with sufficient bondingforce, and the electrical characteristics of the light emitting device2100 is secured.

The minimum distance between the first bonding part 2171 and the secondbonding part 2172 may be greater than 125 micrometers to secure opticalcharacteristics and also less than 300 micrometers to secure theelectrical characteristics and reliability by the bonding force.

In this embodiment, in order to secure the optical characteristics, theelectrical characteristics, and the bonding force, the distance betweenthe first bonding part 2171 and the second bonding part 2172 is providedto 125 micrometers or more and 300 micrometers or less. However, thisembodiment is not limited thereto, and the distance between the firstbonding part 2171 and the second bonding part 2172 may be less than 125micrometers to further improve the electrical characteristics or thereliability of the light emitting device package when compared to thisembodiment and may be greater than 300 micrometers to further improvethe optical properties when compared to this embodiment.

According to an embodiments, light emitted from the first and secondlight emitting structures 2110 and 2120 may not be incident into thefirst electrode 2141 and the second electrode 2142 but be reflected bythe first electrode 2141 and the second electrode 2142. Accordingly,according to an embodiment, a loss of the light generated in and emittedfrom the first and second light emitting structures 2110 and 2120because the light is incident into the first electrode 2141 and thesecond electrode 2142 may be minimized.

The light emitting device according to the embodiment described abovehas been described with reference to the structure in which the twolight emitting structures are connected in series on one substrate.However, the light emitting device according to another embodiment maybe provided in a structure in which three or more light emittingstructures are connected in series on one substrate.

For example, the light emitting device illustrated in FIG. 20illustrates an example in which three light emitting structures areconnected in series on a single substrate. FIG. 20 is a viewillustrating further another example of a light emitting device that isapplied to the light emitting device package according to an embodimentof the present invention.

In the description of the light emitting device according to anembodiment with reference to FIG. 20 , descriptions overlapping withthose described above may be omitted.

As illustrated in FIG. 20 , the light emitting device according to anembodiment may comprise a first light emitting structure 3110, a secondlight emitting structure 3120, and a third light emitting structure3130.

The first light emitting structure 3110 and the second light emittingstructure 3120 may be spaced apart from each other by a first isolationline IL11. Also, the second light emitting structure 3120 and the thirdlight emitting structure 3130 may be spaced apart from each other by asecond isolation line IL12.

A first line opening TH11 may be provided between the first lightemitting structure 3110 and the second light emitting structure 3120. Alower semiconductor layer of the first light emitting structure 3110 maybe exposed through the first line opening TH11.

The lower semiconductor layer of the first light emitting structure 3110and an upper semiconductor layer of the second light emitting structure3120 may be electrically connected to each other through a firstconnection electrode provided in the first line opening TH11.

A second line opening TH12 may be provided between the second lightemitting structure 3120 and the third light emitting structure 3130. Thelower semiconductor layer of the second light emitting structure 3120may be exposed through the second line opening TH12.

The lower semiconductor layer of the second light emitting structure3120 and the upper semiconductor layer of the third light emittingstructure 3130 may be electrically connected to each other through asecond connection electrode provided in the second line opening TH12.

According to an embodiment, a first bonding part 3171 may be disposed onthe first light emitting structure 3110, and a second bonding part 3172may be disposed on the third light emitting structure 3130. The firstbonding part 3171 may be electrically connected to the uppersemiconductor layer of the first light emitting structure 3110. Also,the second bonding part 3172 may be electrically connected to the lowersemiconductor layer of the third light emitting structure 3130.

As power is supplied to the first bonding part 3171 and the secondbonding part 3172 of the light emitting device according to anembodiment, it is possible that the first bonding part 3171, the uppersemiconductor layer of the first light emitting structure 3110, thelower semiconductor layer of the first light emitting structure 3110,the first connection electrode, the upper semiconductor layer of thesecond light emitting structure 3120, the lower semiconductor layer ofthe second light emitting structure 3120, the second connectionelectrode, the upper semiconductor layer of the third light emittingstructure 3130, the lower semiconductor layer of the third lightemitting structure 3130, and the second bonding part 3172 areelectrically connected in series to each other.

Also, according to an embodiment, a plurality of light emittingstructures spaced apart from each other may be disposed between thefirst bonding part and the second bonding part of the light emittingdevice. In this embodiment, two and three light emitting structures areprovided, but this embodiment is not thereto. For example, the morenumber of light emitting structures may be disposed as necessary.

Thus, the light emitting device according to an embodiment has anadvantage in supplying a high voltage to improve the light output andreduce the operation voltage.

The light emitting device package according to an embodiment describedabove may be applied to the light source device.

In addition, the light source device may comprise a display device, alighting device, a head lamp, or the like according to an industrialfield.

As an example of the light source device, a display device may comprisea bottom cover, a reflector disposed on the bottom cover, a lightemitting module including a light emitting device that emits light, alight guide plate disposed in front of the reflector and guiding lightemitted from the light emitting module forward, an optical sheetincluding prism sheets disposed in front of the light guide plate, adisplay panel disposed in front of the optical sheet, an image signaloutput circuit connected to the display panel to supply an image signalto the display panel, and a color filter disposed in front of thedisplay panel. In this case, the bottom cover, the reflector, the lightemitting module, the light guide plate, and the optical sheet mayconstitute a backlight unit. In addition, the display device may notinclude a color filter, and may have a structure in which semiconductordevice emitting red, green, and blue light are disposed, respectively.

As still another example of the light source device, the head lamp mayinclude a light emitting module including a light emitting devicepackage disposed on a substrate, a reflector for reflecting lightemitted from the light emitting module in a predetermined direction, forexample, forward, a lens for refracting light reflected by the reflectorforward, and a shade for constructing a light distribution patterndesired by designer by blocking or reflecting a portion of the lightthat is reflected by the reflector to be directed to the lens.

As another example of the light source device, the lighting device mayinclude a cover, a light source module, a heat radiator, a power supply,an inner case, and a socket. In addition, the light source deviceaccording to an embodiment may further include at least one of a memberand a holder. The light source module may include the light emittingdevice or the light emitting device package according to the embodiment.

The features, structures, effects and the like described in the aboveembodiments are included in at least one embodiment and are not limitedto one embodiment only. Further, with respect to the features,structures, effects, and the like described in the embodiments, otherembodiments may be carried out with combinations or modifications bythose having ordinary skill in the art. Accordingly, the contentsrelevant to the combinations and modifications should be construed asbeing included in the scope of the embodiments.

Although preferable embodiments have been proposed and set forth in theaforementioned description, the present invention should not beconstrued as limited thereto. It will be apparent that variousdeformations and modifications not illustrated are available within thescope without departing from inherent features of the embodiment of thepresent invention by any one having ordinary skill in the art. Forexample, each component specifically shown in the embodiments may becarried out with the modifications. In addition, it is apparent thatdifferences relevant to the modifications and deformations are includedin the scope of the embodiments set in the accompanying claims of thepresent invention.

According to the semiconductor device package and the method ofmanufacturing the semiconductor device package according to theembodiment, there is the advantage in improving the light extractionefficiency, the electrical characteristics, and the reliability.

According to the semiconductor device package and the method ofmanufacturing the semiconductor device package according to theembodiment, there is the advantage in improving the process efficiencyand proposing the new package structure to reduce the manufacturingcosts and improve the manufacturing yield.

The semiconductor device package according to the embodiment may beprovided with the body having the high reflectance to prevent thereflector from being discolored, thereby improving the reliability ofthe semiconductor device package.

According to the semiconductor device package and the method ofmanufacturing the semiconductor device according to the embodiment,there is the advantage in preventing the re-melting phenomenon fromoccurring in the bonding area of the semiconductor device package whilethe semiconductor device package is re-bonded on the substrate orthermally treated.

What is claimed is:
 1. A light emitting device package comprising: apackage body comprising a first package body and a second package body,the second package including a first opening, the second package bodybeing disposed on a top surface of the first package body; a lightemitting device disposed in the first opening and including a firstbonding part and a second bonding part; a first conductor disposed belowthe first bonding part; a second conductor disposed below the secondbonding part; a first conductive layer, different from the firstconductor, directly contacting a bottom surface of the first bondingpart, and disposed on each of a bottom and side surfaces of the firstconductor; and a second conductive layer, different from the secondconductor, directly contacting a bottom surface of the second bondingpart, and disposed on each of a bottom and side surfaces of the secondconductor, wherein the first conductor is electrically connected to thefirst bonding part, wherein the second conductor is electricallyconnected to the second bonding part, and wherein an entirety of thefirst conductor and an entirety of the second conductor are disposedbelow the top surface of the first package body.
 2. The light emittingdevice package of claim 1, wherein the light emitting device furtherincludes a substrate, and a sum of areas of the first bonding part andthe second bonding part is 0.7% or more of an area of an upper surfaceof the substrate.
 3. The light emitting device package of claim 1,wherein the package body includes a first package body includes a secondopening and a third opening.
 4. The light emitting device packageaccording to claim 3, wherein the first package body has a recess thatis recessed from an upper surface of the first package body towards alower surface of the first package body; and a first resin is disposedbetween the upper surface of the first package body and the lightemitting device and disposed in the recess, and an entirety of the firstresin is disposed directly below the light emitting device.
 5. The lightemitting device package according to claim 3, wherein a width of a lowerregion of the second opening is greater than a width of an upper regionof the second opening, or wherein a width of a lower region of the thirdopening is greater than a width of an upper region of the third opening.6. The light emitting device package according to claim 3, wherein thefirst conductive layer is disposed in the second opening, wherein thesecond conductive layer is disposed in the third opening, wherein thefirst conductor is electrically connected to the first conductive layer,and wherein the second conductor is electrically connected to the secondconductive layer.
 7. The light emitting device package according toclaim 6, wherein a height of the first conductor between a top surfaceand a bottom surface thereof is smaller than a height of the firstconductive layer between a top surface and a bottom surface thereof, andwherein a height of the second conductor between a top surface and abottom surface thereof is smaller than a height of the second conductivelayer between a top surface and a bottom surface thereof.
 8. The lightemitting device package according to claim 6, wherein a width of thefirst conductive layer is greater than a width of the first bondingpart, and a width of the second conductive layer is greater than a widthof the second bonding part.
 9. The light emitting device packageaccording to claim 6, wherein a lower surface of the first conductor islower than an upper surface of the first conductive layer, and a lowersurface of the second conductor is lower than an upper surface of thesecond conductive layer.
 10. The light emitting device package accordingto claim 1, wherein the first conductor and the second conductor arebonded to the first bonding part and the second bonding part throughseparate bonding materials, respectively.
 11. The light emitting devicepackage according to claim 6, wherein the first conductive layer or thesecond conductive layer includes at least one of Ag, Au, Pt, Sn, Cu, andan alloy thereof.
 12. The light emitting device package according toclaim 6, wherein the first conductive layer or the second conductivelayer is formed of a conductive paste.
 13. The light emitting devicepackage according to claim 6, wherein the first package body comprises afirst frame and a second frame spaced apart from the first frame, afirst plating layer is formed on surfaces of the first frame, and asecond plating layer is formed on surfaces of the second frame.
 14. Thelight emitting device package according to claim 13, wherein a firstalloy layer is disposed in the second opening and formed by the firstplating layer and the first conductive layer, and a second alloy layeris disposed in the third opening and formed by the second plating layerand the second conductive layer.
 15. The light emitting device packageaccording to claim 4, wherein the recess is provided in a closed loopshape under the light emitting device and around the second and thirdopenings.
 16. The light emitting device package according to claim 15,wherein when viewed from an upper side of the light emitting device, asize of the light emitting device is greater than a closed loop areaprovided by the recess.
 17. The light emitting device package accordingto claim 15, wherein the closed loop defined by the recess is providedin an outline connecting four side surfaces of the light emitting deviceto each other.
 18. The light emitting device package according to claim3, wherein the first package body includes a first lower recess recessedupward from a lower surface of the first package body and spaced fromthe second opening, and a second lower recess recessed upward from thelower surface of the first package body and spaced from the thirdopening.
 19. The light emitting device package according to claim 3,wherein each of the first conductor and the second conductor or each ofthe second and third openings includes a first point between an upperportion and a lower portion thereof and that gradually increases inwidth from a lower region toward the first point and then decreases inwidth again, and the width gradually increases from an intermediateregion in which the width decreases toward the upper region and thendecreases again.
 20. The light emitting device package according toclaim 3, wherein an adhesion layer is disposed between the first packagebody and the second package body.